- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄296674 > NAND01GR4A2AV6 (意法半導體) 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories PDF資料下載
參數(shù)資料
| 型號： | NAND01GR4A2AV6 |
| 廠商： | 意法半導體 |
| 英文描述： | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| 中文描述： | 128兆，256兆，512兆位，1千兆位（x8/x16）528 Byte/264字的頁面，1.8V/3V，NAND閃存芯片 |
| 文件頁數(shù)： | 26/57頁 |
| 文件大?。?/td> | 916K |
| 代理商： | NAND01GR4A2AV6 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁當前第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
32/57
Hardware Simulation Models
Behavioral simulation models. Denali Software
Corporation models are platform independent
functional models designed to assist customers in
performing entire system simulations (typical
VHDL/Verilog). These models describe the logic
behavior and timings of NAND Flash devices, and
so allow software to be developed before hard-
ware.
IBIS simulations models. IBIS (I/O Buffer Infor-
mation Specification) models describe the behav-
ior of the I/O buffers and electrical characteristics
of Flash devices.
These models provide information such as AC
characteristics, rise/fall times and package me-
chanical data, all of which are measured or simu-
lated at voltage and temperature ranges wider
than those allowed by target specifications.
IBIS models are used to simulate PCB connec-
tions and can be used to resolve compatibility is-
sues when upgrading devices. They can be
imported into SPICETOOLS.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NAND04GW3C2AN6F | 512M X 8 FLASH 3V PROM, 45 ns, PDSO48 |
| NAND512R3A2CN6E | 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND512R3A2CN6F | 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND512R3A2C | 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND512R4A2CN6F | 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NAND01GR4A2AV6E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND01GR4A2AV6F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND01GR4A2AV6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND01GR4A2AZA1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND01GR4A2AZA1E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
發(fā)布緊急采購，3分鐘左右您將得到回復。