參數(shù)資料
型號： NAND01GR4A2AN1
廠商： 意法半導(dǎo)體
英文描述： 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
中文描述： 128兆，256兆，512兆位，1千兆位（x8/x16）528 Byte/264字的頁面，1.8V/3V，NAND閃存芯片
文件頁數(shù)： 50/57頁
文件大?。?/td> 916K
代理商： NAND01GR4A2AN1
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
54/57
APPENDIX A. HARDWARE INTERFACE EXAMPLES
Nand Flash devices can be connected to a micro-
controller system bus for code and data storage.
For microcontrollers that have an embedded
NAND controller the NAND Flash can be connect-
ed without the addition of glue logic (see
Figure 43.). However a minimum of glue logic is
required for general purpose microcontrollers that
do not have an embedded NAND controller. The
glue logic usually consists of a flip-flop to hold the
Chip Enable, Address Latch Enable and Com-
mand Latch Enable signals stable during com-
mand and address latch operations, and some
logic gates to simplify the firmware or make the de-
sign more robust.
Figure 44. gives an example of how to connect a
NAND Flash to a general purpose microcontroller.
The additional OR gates allow the microcontrol-
ler’s Output Enable and Write Enable signals to be
used for other peripherals. The OR gate between
A3 and CSn maps the flip-flop and NAND I/O in
different address spaces inside the same chip se-
lect unit, which improves the setup and hold times
and simplifies the firmware. The structure uses the
microcontroller DMA (Direct Memory Access) en-
gines to optimize the transfer between the NAND
Flash and the system RAM.
For any interface with glue logic, the extra delay
caused by the gates and flip-flop must be taken
into account. This delay must be added to the mi-
crocontroller’s AC characteristics and register set-
tings to get the NAND Flash setup and hold times.
For mass storage applications (hard disk emula-
tions or systems where a huge amount of storage
is required) NAND Flash memories can be con-
nected together to build storage modules (see Fig-
Figure 43. Connection to Microcontroller, Without Glue Logic
AI08045b
R
W
I/O
E
AL
CL
W
G
CSn
AD(24:16)
Microcontroller
NAND
Flash
DQ
WP
RB
PWAITEN
AD17
AD16
VDD
VDD or VSS
or General Purpose I/O
相關(guān)PDF資料
PDF描述
NAND01GR4A2AN6 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND01GR4A2AV1 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND01GR4A2AV6 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND04GW3C2AN6F 512M X 8 FLASH 3V PROM, 45 ns, PDSO48
NAND512R3A2CN6E 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NAND01GR4A2AN1E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND01GR4A2AN1F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND01GR4A2AN1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND01GR4A2AN6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND01GR4A2AN6E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
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