參數(shù)資料
型號: N3476TD360
廠商: WESTCODE SEMICONDUCTORS LTD
元件分類: 晶閘管
英文描述: 6787 A, 3600 V, SCR
文件頁數(shù): 8/11頁
文件大小: 211K
代理商: N3476TD360
WESTCODE
WESTCODE An IXYS Company
Phase Control Thyristor Types N3476T#360 to N3476T#420
Data Sheet. Types N3476T#360 to N3476T#420 Issue 1
Page 6 of 11
May, 2004
Curves
Figure 1 - On-state characteristics of Limit device
Figure 2 - Transient thermal impedance
100
1000
10000
0.5
1
1.5
2
2.5
3
Instantaneous On-state voltage - VTM (V)
Instantaneous
On-state
cur
rent
-
I
TM
(A
)
Tj = 125°C
Tj = 25°C
0.000001
0.00001
0.0001
0.001
0.01
0.1
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Time (s)
Tr
ansient
t
h
er
mal
impedance
(
K
/W
)
DSC
0.008K/W
SSC
0.016K/W
Figure 3 - Gate characteristics - Trigger limits
Figure 4 - Gate characteristics - Power curves
0
2
4
6
00.25
0.5
0.75
1
Gate Current - IG (A)
Gat
e
V
o
lt
age
-
V
G
(V)
IGD, VGD
IGT, VGT
Min VG dc
Max VG dc
Tj=25°C
125°C
25°C
-10°C
-40°C
0
2
4
6
8
10
12
14
16
18
20
02468
10
Gate Current - IG (A)
Gat
e
V
o
lt
age
-
V
G
(V)
PG 5W dc
PG Max 50W dc
Min VG dc
Max VG dc
Tj=25°C
N3476T#360-420
Issue 1
N3476T#360-420
Issue 1
N3476T#360-420
Issue 1
N3476T#360-420
Issue 1
相關(guān)PDF資料
PDF描述
N3476TD370 6787 A, 3700 V, SCR
N3476TD380 6787 A, 3800 V, SCR
N3476TD400 6787 A, 4000 V, SCR
N3476TD420 6787 A, 4200 V, SCR
N3476TT360 6787 A, 3600 V, SCR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
N3480B1EB1S 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Silicon Power Rectifier Assemblies Plate Heatsink
N3480B1EN1S 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Silicon Power Rectifier Assemblies Plate Heatsink
N3480C1EB1S 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Silicon Power Rectifier Assemblies Plate Heatsink
N3480C1EN1S 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Silicon Power Rectifier Assemblies Plate Heatsink
N3480D1EB1S 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Silicon Power Rectifier Assemblies Plate Heatsink