參數(shù)資料
型號: SI7601DN
廠商: Vishay Intertechnology,Inc.
元件分類: MOSFETs
英文描述: P-Channel 20-V (D-S) MOSFET, Low-Threshold
中文描述: P通道20 - V(下局副局長)MOSFET的低閾值
文件頁數(shù): 2/3頁
文件大?。?/td> 199K
代理商: SI7601DN
Vishay Siliconix
SPICE Device Model Si7601DN
SPECIFICATIONS (T
J
= 25
°
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Simulated
Data
Measured
Data
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=
250
μ
A
1.1
V
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
=
4.5 V
187
A
V
GS
=
4.5 V, I
D
=
11 A
0.013
0.016
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
=
2.5 V, I
D
=
8.9 A
0.021
0.025
Forward Transconductance
a
g
fs
V
DS
=
10 V, I
D
=
11 A
48
31.7
S
Diode Forward Voltage
a
Dynamic
b
V
SD
I
S
=
6 A
0.85
0.80
V
Input Capacitance
C
iss
1613
1870
Output Capacitance
C
oss
491
490
Reverse Transfer Capacitance
C
rss
V
DS
=
10 V, V
GS
= 0 V, f = 1 MHz
382
460
pF
V
DS
=
10 V, V
GS
=
5 V, I
D
=
11 A
18
18
Total Gate Charge
Q
g
17
16.2
Gate-Source Charge
Q
gs
4.1
4.1
Gate-Drain Charge
Q
gd
V
DS
=
10 V, V
GS
=
4.5 V, I
D
=
11 A
4.8
4.8
nC
Notes
a. Pulse test; pulse width
300
μ
s, duty cycle
2%.
b. Guaranteed by design, not subject to production testing.
2
www.vishay.com
Document Number: 74145
S-70044
Rev. B, 22-Jan-07
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