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參數(shù)資料
| 型號： | MT58V1MV18DT-10 |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | SRAM |
| 英文描述： | 1M X 18 CACHE SRAM, 5 ns, PQFP100 |
| 封裝： | PLASTIC, TQFP-100 |
| 文件頁數(shù)： | 4/34頁 |
| 文件大?。?/td> | 521K |
| 代理商： | MT58V1MV18DT-10 |
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18Mb: 1 MEG x 18, 512K x 32/36
PIPELINED, DCD SYNCBURST SRAM
18Mb: 1 Meg x 18, 512K x 32/36, Pipelined, DCD SyncBurst SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT58L1MY18D_16_D.fm – Rev. D, Pub 2/03
12
2003 Micron Technology, Inc.
Absolute Maximum Ratings
3.3V VDD
Voltage on VDD Supply
Relative to VSS ....................................... -0.5V to +4.6V
Voltage on VDDQ Supply
Relative to VSS ....................................... -0.5V to +4.6V
VIN (DQx) ....................................... -0.5V to VDDQ + 0.5V
VIN (inputs) ....................................... -0.5V to VDD + 0.5V
Storage Temperature (TQFP).................-55C to +150C
Storage Temperature (FBGA).................-55C to +125C
Junction Temperature .......................................... +150C
Short Circuit Output Current ...............................100mA
2.5V VDD
Voltage on VDD Supply
Relative to VSS ....................................... -0.3V to +3.6V
Voltage on VDDQ Supply
Relative to VSS ....................................... -0.3V to +3.6V
VIN (DQx) ....................................... -0.3V to VDDQ + 0.3V
VIN (inputs) ....................................... -0.3V to VDD + 0.3V
Storage Temperature (TQFP).................-55C to +150C
Storage Temperature (FBGA).................-55C to +125C
Junction Temperature .......................................... +150C
Short Circuit Output Current ...............................100mA
Stresses greater than those listed may cause perma-
nent damage to the device. This is a stress rating only,
and functional operation of the device at these or any
other conditions above those indicated in the opera-
tional sections of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
Maximum Junction Temperature depends upon
package type, cycle time, loading, ambient tempera-
ture, and airflow.
Table 8:
3.3V VDD, 3.3V I/O DC Electrical Characteristics and Operating Conditions
Notes appear following parameter tables on page 17; 0C
TA +70C; VDD and VDDQ = 3.3V ±0.165V unless otherwise
noted
DESCRIPTION
CONDITIONS
SYMBOL
MIN
MAX
UNITS
NOTES
Input High (Logic 1) Voltage
VIH
2.0
VDD + 0.3
V
Input Low (Logic 0) Voltage
VIL
-0.3
0.8
V
Input Leakage Current
0V
VIN VDD
ILI
-1.0
1.0
A
Output Leakage Current
Output(s) disabled,
0V
VIN VDD
ILO
-1.0
1.0
A
Output High Voltage
IOH = -4.0mA
VOH
2.4
–
V
Output Low Voltage
IOL = 8.0mA
VOL
–0.4
V
Supply Voltage
VDD
3.135
3.465
V
Isolated Output Buffer Supply
VDDQ3.135
VDD
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