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參數(shù)資料
| 型號： | MT58V1MV18DT-10 |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | SRAM |
| 英文描述： | 1M X 18 CACHE SRAM, 5 ns, PQFP100 |
| 封裝： | PLASTIC, TQFP-100 |
| 文件頁數(shù)： | 11/34頁 |
| 文件大?。?/td> | 521K |
| 代理商： | MT58V1MV18DT-10 |
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18Mb: 1 MEG x 18, 512K x 32/36
PIPELINED, DCD SYNCBURST SRAM
18Mb: 1 Meg x 18, 512K x 32/36, Pipelined, DCD SyncBurst SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT58L1MY18D_16_D.fm – Rev. D, Pub 2/03
19
2003 Micron Technology, Inc.
Figure 8:
WRITE Timing
NOTE:
1. D(A2) refers to output from address A2. D(A2 + 1) refers to output from the next internal burst address following
A2.
2. CE2# and CE2 have timing identical to CE#. On this diagram, when CE# is LOW, CE2# is LOW and CE2 is HIGH. When
CE# is HIGH, CE2# is HIGH and CE2 is LOW.
3. OE# must be HIGH before the input data setup and held HIGH throughout the data hold time. This prevents input/
output data contention for the time period prior to the byte write enable inputs being sampled.
4. ADV# must be HIGH to permit a WRITE to the loaded address.
5. Full-width WRITE can be initiated by GW# LOW; or GW# HIGH and BWE#, BWa#, and BWb# LOW for x18 device; or
GW# HIGH and BWE#, BWa#–BWd# LOW for x32 and x36 devices.
tKC
tKL
CLK
ADSP#
tADSH
tADSS
ADDRESS
tKH
OE#
ADSC#
CE#
(NOTE 2)
tAH
tAS
A1
tCEH
tCES
BWE#,
BWa#-BWd#
Q
High-Z
ADV#
BURST READ
BURST WRITE
D(A2)
D(A2 + 1)
D(A3)
D(A3 + 1)
D(A3 + 2)
D(A2 + 3)
A2
A3
D
Extended BURST WRITE
D(A2 + 2)
Single WRITE
tADSH
tADSS
tADSH
tADSS
tOEHZ
tAAH
tAAS
tWH
tWS
tDH
tDS
(NOTE 3)
(NOTE 1)
(NOTE 4)
GW#
tWH
tWS
(NOTE 5)
Byte write signals are ignored for first cycle when
ADSP# initiates burst
ADSC# extends burst
ADV# suspends burst
DON’T CARE
UNDEFINED
D(A1)
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MT58V1MV18DT-6 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT58V1MV18DT-7.5 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT58V1MV18FT-7 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT58V1MV18FT-7.5 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT58V512V32D | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:16Mb SYNCBURST⑩ SRAM |
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