參數(shù)資料
型號: MT4JSF6464HY-1G4XX
元件分類: DRAM
英文描述: 64M X 64 DDR DRAM MODULE, ZMA204
封裝: LEAD FREE, SODIMM-204
文件頁數(shù): 12/19頁
文件大?。?/td> 618K
代理商: MT4JSF6464HY-1G4XX
PDF: 09005aef82b2f090/Source: 09005aef82b2f012
Micron Technology, Inc., reserves the right to change products or specifications without notice.
JSF4C64_64x64HY.fm - Rev. B 3/08 EN
2
2007 Micron Technology, Inc. All rights reserved
512MB (x64, SR) 204-Pin DDR3 SDRAM SODIMM
Features
Notes:
1. The data sheet for the base device can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and
PCB revisions. Consult factory for current revision codes. Example: MT4JSF6464HY-1G1B1.
Table 2:
Addressing
Parameter
512MB
Refresh count
8K
Row address
8K (A[12:0])
Device bank address
8 (BA[2:0])
Device configuration
1Gb (64 Meg x 16)
Column address
1K (A[9:0])
Module rank address
1 (S0#)
Table 3:
Part Numbers and Timing Parameters – 512MB Modules
Base device: MT41J64M16,1 1Gb DDR3 SDRAM
Part Number2
Module
Density
Configuration
Module
Bandwidth
Memory Clock/
Data Rate
Clock Cycles
(CL-tRCD-tRP)
MT4JSF6464H(I)Y-1G5__
512MB
64 Meg x 64
10.6 GB/s
1.5ns/1333 MT/s
8-8-8
MT4JSF6464H(I)Y-1G4__
512MB
64 Meg x 64
10.6 GB/s
1.5ns/1333 MT/s
9-9-9
MT4JSF6464H(I)Y-1G3__
512MB
64 Meg x 64
10.6 GB/s
1.5ns/1333 MT/s
10-10-10
MT4JSF6464H(I)Y-1G1__
512MB
64 Meg x 64
8.5 GB/s
1.87ns/1066 MT/s
7-7-7
MT4JSF6464H(I)Y-1G0__
512MB
64 Meg x 64
8.5 GB/s
1.87ns/1066 MT/s
8-8-8
MT4JSF6464H(I)Y-80C__
512MB
64 Meg x 64
6.4 GB/s
2.5ns/800 MT/s
5-5-5
MT4JSF6464H(I)Y-80B__
512MB
64 Meg x 64
6.4 GB/s
2.5ns/800 MT/s
6-6-6
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