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參數(shù)資料
| 型號： | MT48V8M16LFB4-8XT |
| 元件分類： | DRAM |
| 英文描述： | 8M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 |
| 封裝： | 8 X 8 MM, LEAD FREE, VFBGA-54 |
| 文件頁數(shù)： | 40/69頁 |
| 文件大?。?/td> | 6213K |
| 代理商： | MT48V8M16LFB4-8XT |
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128Mb: x16, x32
MOBILE SDRAM
09005aef8071a76b
Micron Technology, Inc., reserves the right to change products or specifications without notice.
128Mbx16x32Mobile_2.fm - Rev. G (DRAFT) 7/04 EN
45
2001 Micron Technology, Inc. All rights reserved.
Table 16:
IDD Specifications and Conditions (x16)
Notes: 1, 3, 6, 11, 13, 31 ; notes appear on page 47; VDD = VDDQ = +3.3V ±0.3V or VDD = VDDQ = 2.5V ±0.2V or VDD = +2.5V
±0.2V, VDDQ = +1.8V ±0.15V
MAX
PARAMETER/CONDITION
SYMBOL
-75M
-8
-10
UNITS NOTES
Operating Current: Active Mode;
Burst = 2; READ or WRITE; tRC = tRC (MIN)
IDD1
130
100
mA
Standby Current: Power-Down Mode; All banks
idle; CKE = LOW
IDD2
450
A
Standby Current: Active Mode;
CKE = HIGH; CS# = HIGH; All banks active after tRCD met;
No accesses in progress
IDD3
40
35
mA
Operating Current: Burst Mode; Page burst;
READ or WRITE; All banks active
IDD4
115
100
95
mA
Auto Refresh Current
CKE = HIGH; CS# = HIGH
tRFC = tRFC (MIN)
IDD5
225
210
170
mA
tRFC = 15.625s
IDD6
33
3
mA
Table 17:
IDD7 Self Refresh Current Options (x16)
Notes: 4 appears on page 47; VDD = VDDQ = +3.3V ±0.3V or VDD = VDDQ = 2.5V ±0.2V or VDD = +2.5V ±0.2V, VDDQ = +1.8V
±0.15V
TEMPERATURE COMPENSATED SELF REFRESH (TCSR)
PARAMETER/CONDITION
MAX TEMPERATURE
-75M, -8, -10
UNITS
Self Refresh Current: CKE < 0.2V (E4 = 1, E3=1)
85C
800
A
Self Refresh Current: CKE < 0.2V (E4 = 0, E3=0)
70C
500
A
Self Refresh Current: CKE < 0.2V (E4 = 0, E3=1)
45C
350
A
Self Refresh Current: CKE < 0.2V (E4 = 1, E3=0)
15C
300
A
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MT48V8M16LFF4-8 XT | 制造商:Micron Technology Inc 功能描述: |
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