參數資料
型號: MT48V8M16LFB4-8XT
元件分類: DRAM
英文描述: 8M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
封裝: 8 X 8 MM, LEAD FREE, VFBGA-54
文件頁數: 18/69頁
文件大?。?/td> 6213K
代理商: MT48V8M16LFB4-8XT
128Mb: x16, x32
MOBILE SDRAM
09005aef8071a76b
Micron Technology, Inc., reserves the right to change products or specifications without notice.
128Mbx16x32Mobile_2.fm - Rev. G (DRAFT) 7/04 EN
25
2001 Micron Technology, Inc. All rights reserved.
Figure 18: READ to PRECHARGE
CLK
DQ
DOUT
n
T2
T1
T4
T3
T6
T5
T0
COMMAND
ADDRESS
READ
NOP
DOUT
n + 1
DOUT
n + 2
DOUT
n + 3
PRECHARGE
ACTIVE
t RP
T7
CLK
DQ
DOUT
n
T2
T1
T4
T3
T6
T5
T0
COMMAND
ADDRESS
READ
NOP
DOUT
n + 1
DOUT
n + 2
DOUT
n + 3
PRECHARGE
ACTIVE
t RP
T7
CLK
DQ
DOUT
n
T2
T1
T4
T3
T6
T5
T0
COMMAND
ADDRESS
READ
NOP
BANK a,
COL n
NOP
DOUT
n + 1
DOUT
n + 2
DOUT
n + 3
PRECHARGE
ACTIVE
t RP
T7
BANK a,
ROW
BANK
(a or all)
DON’T CARE
X = 0 cycles
CAS Latency = 1
X = 1 cycle
CAS Latency = 2
CAS Latency = 3
BANK a,
COL n
BANK a,
ROW
BANK
(a or all)
BANK a,
COL n
BANK a,
ROW
BANK
(a or all)
X = 2 cycles
TRANSITIONING DATA
NOTES:
1) Assumes tRAS(min) has been satisfied prior to the precharge command
2) N+3 is either the last data element of a BL=4, or the last desired data element of a longer burst
3) DQM is LOW.
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相關代理商/技術參數
參數描述
MT48V8M16LFF4-8 XT 制造商:Micron Technology Inc 功能描述: