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128Mb: x16, x32
MOBILE SDRAM
09005aef8071a76b
Micron Technology, Inc., reserves the right to change products or specifications without notice.
128Mbx16x32Mobile_2.fm - Rev. G (DRAFT) 7/04 EN
46
2001 Micron Technology, Inc. All rights reserved.
Table 18:
IDD Specifications And Conditions (x32)
±0.2V, VDDQ = +1.8V ±0.15V
MAX
PARAMETER/CONDITION
SYMBOL
-75M
-8
-10
UNITS NOTES
Operating Current: Active Mode;
Burst = 2; READ or WRITE; tRC = tRC (MIN)
IDD1
150
120
mA
Standby Current: Power-Down Mode; All banks idle; CKE = LOW
IDD2
450
A
Standby Current: Active Mode;
CKE = HIGH; CS# = HIGH; All banks active after tRCD met;
No accesses in progress
IDD3
45
40
mA
Operating Current: Burst Mode; Page burst;
READ or WRITE; All banks active
IDD4
130
115
110
mA
Auto Refresh Current
CKE = HIGH; CS# = HIGH
tRFC = tRFC (MIN)
IDD5
235
220
180
mA
tRFC = 15.625s
IDD6
33
3
mA
Table 19:
IDD7 Self Refresh Current Options (x32)
Notes: 4 appears on page 47; VDD = VDDQ = +3.3V ±0.3V or VDD = VDDQ = 2.5V ±0.2V or VDD = +2.5V ±0.2V, VDDQ = +1.8V ±0.15V
TEMPERATURE COMPENSATED SELF REFRESH (TCSR)
PARAMETER/CONDITION
MAX TEMPERATURE
-75M, -8, -10
UNITS
Self Refresh Current: CKE < 0.2V (E4 = 1, E3=1)
85C
1000
A
Self Refresh Current: CKE < 0.2V (E4 = 0, E3=0)
70C
550
A
Self Refresh Current: CKE < 0.2V (E4 = 0, E3=1)
45C
400
A
Self Refresh Current: CKE < 0.2V (E4 = 1, E3=0)
15C
350
A
Table 20:
Capacitance (FBGA Pacakge)
PARAMETER
SYMBOL
MIN
MAX
UNITS
NOTES
Input Capacitance: CLK
CI1
1.5
3.5
pF
Input Capacitance: All other input-only pins
CI2
1.5
3.8
pF
Input/Output Capacitance: DQs
CIO
3.0
6.0
pF
Table 21:
Capacitance (TSOP Pacakge)
PARAMETER
SYMBOL
MIN
MAX
UNITS
NOTES
Input Capacitance: CLK
CI1
2.5
3.5
pF
Input Capacitance: All other input-only pins
CI2
2.5
3.8
pF
Input/Output Capacitance: DQs
CIO
4.0
6.0
pF