參數資料
型號： MT48LC8M8A2TG-8EL:GIT
元件分類： DRAM
英文描述： 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
封裝： 0.400 INCH, PLASTIC, TSOP2-54
文件頁數： 26/55頁
文件大?。?/td> 1454K
32
64Mb: x4, x8, x16 SDRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
64MSDRAM.pmd – Rev. H; Pub. 12/04
2002 Micron Technology, Inc. All rights reserved.
64Mb: x4, x8, x16
SDRAM
ABSOLUTE MAXIMUM RATINGS*
Voltage on VDD, VDDQ Supply
Relative to VSS ............................................ -1V to +4.6V
Voltage on Inputs, NC or I/O Pins
Relative to VSS ............................................ -1V to +4.6V
Operating Temperature,
TA (commercial) ...................................... 0°C to +70°C
Operating Temperature,
TA (extended; IT parts)...................... -40°C to +85°C
Storage Temperature (plastic) ............ -55°C to +150°C
Power Dissipation ........................................................ 1W
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(Notes: 1, 5, 6; notes appear on page 35); VDD, VDDQ = +3.3V ±0.3V
PARAMETER/CONDITION
SYMBOL
MIN
MAX
UNITS NOTES
Supply Voltage
VDD, VDDQ
3
3.6
V
Input High Voltage: Logic 1; All inputs
VIH
2VDD + 0.3
V
22
Input Low Voltage: Logic 0; All inputs
VIL
-0.3
0.8
V
22
Input Leakage Current:
Any input 0V
≤ VIN ≤ VDD
II
-5
5
A
(All other pins not under test = 0V)
Output Leakage Current: DQs are disabled; 0V
≤ VOUT ≤ VDDQIOZ
-5
5
A
Output Levels:
VOH
2.4
–
V
Output High Voltage (IOUT = -4mA)
Output Low Voltage (IOUT = 4mA)
VOL
–
0.4
V
IDD SPECIFICATIONS AND CONDITIONS
(Notes: 1, 5, 6, 11, 13; notes appear on page 35) ; VDD, VDDQ = +3.3V ±0.3V
PARAMETER/CONDITION
SYMBOL
- 6
- 7 E
- 7 5
- 8 E
UNITS N O T E S
Operating Current: Active Mode;
IDD1
150
125
115
95
mA
3, 18,
Burst = 2; READ or WRITE; tRC >= tRC (MIN)
19, 32
Standby Current: Power-Down Mode; All banks idle;
IDD2
2
222
mA
32
CKE = LOW
Standby Current: Active Mode;
IDD3
60
45
35
mA
3, 12,
CKE = HIGH; CS# = HIGH; All banks active after tRCD met;
19, 32
No accesses in progress
Operating Current: Burst Mode; Page burst;
IDD4
180
150
140
120
mA
3, 18,
READ or WRITE; All banks active
19, 32
Auto Refresh Current:
tRFC = tRFC (MIN)
IDD5
250
230
210
190
mA
3, 12,
CKE = HIGH; CS# = HIGH
18, 19,
tRFC = 15.625s
IDD6
3
32, 33
Self Refresh Current:
Standard
IDD7
1
111
mA
4
CKE
≤ 0.2V
Low power (L)
0.5
MAX
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