參數(shù)資料
型號(hào): MT48LC8M8A2TG-8EL:GIT
元件分類: DRAM
英文描述: 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
封裝: 0.400 INCH, PLASTIC, TSOP2-54
文件頁(yè)數(shù): 22/55頁(yè)
文件大小: 1454K
29
64Mb: x4, x8, x16 SDRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
64MSDRAM.pmd – Rev. H; Pub. 12/04
2002 Micron Technology, Inc. All rights reserved.
64Mb: x4, x8, x16
SDRAM
NOTE (continued):
5. The following states must not be interrupted by any executable command; COMMAND INHIBIT or NOP commands must
be applied on each positive clock edge during these states.
Refreshing: Starts with registration of an AUTO REFRESH command and ends when tRC is met. Once tRC
is met, the SDRAM will be in the all banks idle state.
Accessing Mode
Register: Starts with registration of a LOAD MODE REGISTER command and ends when tMRD has
been met. Once tMRD is met, the SDRAM will be in the all banks idle state.
Precharging All: Starts with registration of a PRECHARGE ALL command and ends when tRP is met. Once tRP
is met, all banks will be in the idle state.
6. All states and sequences not shown are illegal or reserved.
7. Not bank-specific; requires that all banks are idle.
8. May or may not be bank-specific; if all banks are to be precharged, all must be in a valid state for precharging.
9. Not bank-specific; BURST TERMINATE affects the most recent READ or WRITE burst, regardless of bank.
10. READs or WRITEs listed in the Command (Action) column include READs or WRITEs with auto precharge enabled and
READs or WRITEs with auto precharge disabled.
11. Does not affect the state of the bank and acts as a NOP to that bank.
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