參數(shù)資料
型號: MT48LC4M32TG-10
元件分類: DRAM
英文描述: 4M X 32 SYNCHRONOUS DRAM, 7 ns, PDSO54
封裝: 0.400 INCH, PLASTIC, TSOP2-54
文件頁數(shù): 28/69頁
文件大?。?/td> 6213K
代理商: MT48LC4M32TG-10
128Mb: x16, x32
MOBILE SDRAM
09005aef8071a76b
Micron Technology, Inc., reserves the right to change products or specifications without notice.
128Mbx16x32Mobile_2.fm - Rev. G (DRAFT) 7/04 EN
34
2001 Micron Technology, Inc. All rights reserved.
Figure 32: READ With Auto Precharge Interrupted by a WRITE
CLK
DQ
DOUT
a
T2
T1
T4
T3
T6
T5
T0
COMMAND
NOP
DIN
d
DIN
d + 2
DIN
d + 3
NOP
T7
BANK n
BANK m
ADDRESS
Idle
NOP
DQM
NOTE: 1. DQM is HIGH at T2 to prevent DOUT-a+1 from contending with DIN-d at T4.
BANK n,
COL a
BANK m,
COL d
WRITE - AP
BANK m
Internal
States
t
Page
Active
READ with Burst of 4
Interrupt Burst, Precharge
Page Active
WRITE with Burst of 4
Write-Back
RP - BANK n
t WR - BANK m
CAS Latency = 3 (BANK n)
READ - AP
BANK n
1
DON’T CARE
TRANSITIONING DATA
DIN
d + 1
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