參數(shù)資料
型號: MT48LC4M32LFB5-10ES:G
元件分類: DRAM
英文描述: 4M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90
封裝: 8 X 13 MM, LEAD FREE, VFBGA-90
文件頁數(shù): 52/69頁
文件大?。?/td> 6213K
128Mb: x16, x32
MOBILE SDRAM
09005aef8071a76b
Micron Technology, Inc., reserves the right to change products or specifications without notice.
128Mbx16x32Mobile_2.fm - Rev. G (DRAFT) 7/04 EN
56
2001 Micron Technology, Inc. All rights reserved.
Figure 43: Single Read – With Auto Precharge
NOTE:
1. For this example, the burst length = 4, the CAS latency = 2, and the READ burst is followed by a “manual” PRECHARGE.
2. x16:A9 and A11 = “Don’t Care”
x32:A8, A9,and A11 = “Don’t Care”
3. PRECHARGE command not allowed or tRAS would be violated.
ENABLE AUTO PRECHARGE
tCH
tCL
tRP
tRAS
tRCD
CAS Latency
tRC
DQMU, DQML
CKE
CLK
A0-A9, A11
DQ
BA0, BA1
A10
tCMH
tCMS
tAH
tAS
tAH
tAS
tAH
tAS
ROW
BANK
ROW
BANK
tHZ
t OH
DOUT m
tAC
COMMAND
tCMH
tCMS
NOP3
READ
ACTIVE
NOP
NOP3
ACTIVE
NOP
tCKH
tCKS
COLUMN m2
T0
T1
T2
T4
T3
T5
T6
T7
T8
NOP
DON’T CARE
UNDEFINED
tCK
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