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參數(shù)資料
| 型號： | MT48H8M16LFB4-8IT:JTR |
| 元件分類： | DRAM |
| 英文描述： | 8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 |
| 封裝： | 8 X 8 MM, LEAD FREE, VFBGA-54 |
| 文件頁數(shù)： | 5/61頁 |
| 文件大?。?/td> | 2469K |
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PDF: 09005aef8237e877/Source: 09005aef8237e8d8
Micron Technology, Inc., reserves the right to change products or specifications without notice.
128Mb_x16 Mobile SDRAM_Y25M_2.fm - Rev. A 6/06 EN
13
2006 Micron Technology, Inc. All rights reserved.
128Mb: x16 Mobile SDRAM
Mode Register Definition
Preliminary
Test modes and reserved states should not be used because unknown operation or
incompatibility with future versions may result.
Write Burst Mode
When M9 = 0, the burst length programmed via M0-M2 applies to both READ and
WRITE bursts; when M9 = 1, the programmed burst length applies to READ bursts, but
write accesses are single-location (nonburst) accesses.
Extended Mode Register
The extended mode register controls the functions beyond those controlled by the mode
register. These additional functions are special features of the mobile device. They
include temperature compensated self refresh (TCSR) control, partial array self refresh
(PASR), and output drive strength. Not programming the extended mode register upon
initialization, will result in default settings for the low power features. The extended
mode will default to full drive strength and full array refresh.
The extended mode register is programmed via the MODE REGISTER SET command
(BA1 = 1, BA0 = 0) and retains the stored information until it is programmed again or the
device loses power.
The extended mode register must be programmed with E6 through E11 set to “0.” It
must be loaded when all banks are idle and no bursts are in progress, and the controller
must wait the specified time before initiating any subsequent operation. Violating either
of these requirements results in unspecified operation.
Once the values are entered the extended mode register settings will be retained even
after exiting deep power-down.
Temperature Compensated Self Refresh
On this version of the Mobile SDR SDRAM, a temperature sensor is implemented for
automatic control of the self refresh oscillator on the device. Therefore, it is recom-
mended not to program or use the Temperature Compensated Self Refresh control bits
in the Extended Mode Register.
Programming of the TCSR bits has no effect on the device. The self refresh oscillator will
continue refresh at the factory programmed optimal rate for the device temperature.
Partial Array Self Refresh
For further power savings during SELF REFRESH, the partial array self refresh (PASR)
feature allows the controller to select the amount of memory that will be refreshed
during SELF REFRESH. The refresh options are all banks (banks 0, 1, 2, and 3); two banks
(banks 0 and 1); and one bank (bank 0). Also included in the refresh options are the 1/2
bank and 1/4 bank partial array self refresh (bank 0). WRITE and READ commands occur
to any bank selected during standard operation, but only the selected banks in PASR will
be refreshed during SELF REFRESH. It is important to note that data in unused banks, or
portions of banks, will be lost when PASR is used. Data will be lost in banks 1, 2, and 3
when the one bank option is used.
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| MT48H8M16LFF3-7E | 制造商:Micron Technology Inc 功能描述: |
| MT48H8M16LFF4-10 | 功能描述:IC SDRAM 128MBIT 100MHZ 54VFBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869 |
| MT48H8M16LFF4-10 IT | 功能描述:IC SDRAM 128MBIT 100MHZ 54VFBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869 |
| MT48H8M16LFF4-8 | 功能描述:IC SDRAM 128MBIT 125MHZ 54VFBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869 |
| MT48H8M16LFF4-8 IT | 功能描述:IC SDRAM 128MBIT 125MHZ 54VFBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869 |
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