參數(shù)資料
型號： MT48H8M16LFB4-8IT:JTR
元件分類： DRAM
英文描述： 8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54
封裝： 8 X 8 MM, LEAD FREE, VFBGA-54
文件頁數(shù)： 24/61頁
文件大?。?/td> 2469K
PDF: 09005aef8237e877/Source: 09005aef8237e8d8
Micron Technology, Inc., reserves the right to change products or specifications without notice.
128Mb_x16 Mobile SDRAM_Y25M_2.fm - Rev. A 6/06 EN
30
2006 Micron Technology, Inc. All rights reserved.
128Mb: x16 Mobile SDRAM
Power-Down
Preliminary
Figure 24:
PRECHARGE Command
Deep Power-Down
Deep power-down mode is a maximum power savings feature achieved by shutting off
the power to the entire memory array of the device. Data on the memory array will not
be retained once deep power-down mode is executed. Deep power-down mode is
entered by having all banks idle then CS# and WE# held LOW with RAS# and CAS# HIGH
at the rising edge of the clock, while CKE is LOW. CKE must be held LOW during deep
power-down.
In order to exit deep power-down mode, CKE must be asserted HIGH. After exiting, the
following sequence is needed in order to enter a new command. Maintain NOP input
conditions for a minimum of 100s. Issue PRECHARGE commands for all banks. Issue
eight or more AUTO REFRESH commands. The values of the mode register and
extended mode register will be retained upon exiting deep power-down.
CLOCK SUSPEND
The clock suspend mode occurs when a column access/burst is in progress and CKE is
registered LOW. In the clock suspend mode, the internal clock is deactivated, “freezing”
the synchronous logic.
For each positive clock edge on which CKE is sampled LOW, the next internal positive
clock edge is suspended. Any command or data present on the input balls at the time of
a suspended internal clock edge is ignored; any data present on the DQ balls remains
driven; and burst counters are not incremented, as long as the clock is suspended. (See
Clock suspend mode is exited by registering CKE HIGH; the internal clock and related
operation will resume on the subsequent positive clock edge.
CS#
WE#
CAS#
RAS#
CKE
CLK
HIGH
All Banks
Bank Selected
BANK
ADDRESS
A10
BA0,1
A0–A9, A11
VALID ADDRESS
DON’T CARE
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT48H8M16LFF3-7E 制造商:Micron Technology Inc 功能描述:
MT48H8M16LFF4-10 功能描述:IC SDRAM 128MBIT 100MHZ 54VFBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869
MT48H8M16LFF4-10 IT 功能描述:IC SDRAM 128MBIT 100MHZ 54VFBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869
MT48H8M16LFF4-8 功能描述:IC SDRAM 128MBIT 125MHZ 54VFBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869
MT48H8M16LFF4-8 IT 功能描述:IC SDRAM 128MBIT 125MHZ 54VFBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869
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