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參數(shù)資料
| 型號(hào)： | MT47H64M16HR-3IT |
| 元件分類： | DRAM |
| 英文描述： | 64M X 16 DDR DRAM, 0.4 ns, PBGA84 |
| 封裝： | 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 |
| 文件頁(yè)數(shù)： | 46/129頁(yè) |
| 文件大?。?/td> | 9252K |
| 代理商： | MT47H64M16HR-3IT |
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Table 6: Temperature Limits
Parameter
Symbol
Min
Max
Units
Notes
Storage temperature
TSTG
–55
150
°C
Operating temperature: commercial
TC
0
85
°C
Operating temperature: industrial
TC
–40
95
°C
TA
–40
85
°C
Notes: 1. MAX storage case temperature TSTG is measured in the center of the package, as shown
in Figure 11. This case temperature limit is allowed to be exceeded briefly during pack-
age reflow, as noted in Micron technical note TN-00-15, “Recommended Soldering
Parameters.”
2. MAX operating case temperature TC is measured in the center of the package, as shown
in Figure 11.
3. Device functionality is not guaranteed if the device exceeds maximum TC during opera-
tion.
4. Both temperature specifications must be satisfied.
5. Operating ambient temperature surrounding the package.
Figure 11: Example Temperature Test Point Location
Width (W)
0.5 (W)
Length (L)
0.5 (L)
Test point
Lmm x Wmm FBGA
Table 7: Thermal Impedance
Die Revision
Package Substrate
θ JA (°C/W)
Airflow = 0m/s
θ JA (°C/W)
Airflow = 1m/s
θ JA (°C/W)
Airflow = 2m/s
θ JB (°C/W) θ JC (°C/W)
60-ball
2-layer
66.5
49.6
43.1
30.3
5.9
4-layer
49.2
40.4
36.4
30
84-ball
2-layer
60.2
44.5
39.3
26.1
5.6
4-layer
44
35.7
32.8
26.1
Note: 1. Thermal resistance data is based on a number of samples from multiple lots and should
be viewed as a typical number.
1Gb: x4, x8, x16 1.55V DDR2 SDRAM
Electrical Specifications – Absolute Ratings
PDF: 09005aef82b91d01
1GbDDR2_1_55V.PDF Rev. A 5/09 EN
23
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2009 Micron Technology, Inc. All rights reserved.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT47H64M16HR-3L | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DDR2 SDRAM |
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