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| 型號(hào)： | MT47H128M8HQ-3AT |
| 元件分類： | DRAM |
| 英文描述： | 128M X 8 DDR DRAM, 0.4 ns, PBGA60 |
| 封裝： | 8 X 11.50 MM, ROHS COMPLIANT, FBGA-60 |
| 文件頁(yè)數(shù)： | 84/129頁(yè) |
| 文件大?。?/td> | 9252K |
| 代理商： | MT47H128M8HQ-3AT |
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Table 31: DDR2-667/800/1066 tDS, tDH Derating Values with Differential Strobe
All units are shown in picoseconds
DQ
Slew
Rate
(V/ns)
DQS, DQS# Differential Slew Rate
2.8 V/ns
2.4 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4 V/ns
1.2 V/ns
1.0 V/ns
0.8 V/ns
Δ
tDS
Δ
tDH
Δ
tDS
Δ
tDH
Δ
tDS
Δ
tDH
Δ
tDS
Δ
tDH
Δ
tDS
Δ
tDH
Δ
tDS
Δ
tDH
Δ
tDS
Δ
tDH
Δ
tDS
Δ
tDH
Δ
tDS
Δ
tDH
2.0
100
63
100
63
100
63
112
75
124
87
136
99
148
111
160
123
172
135
1.5
67
42
67
42
67
42
79
54
91
66
103
78
115
90
127
102
139
114
1.0
0
12
24
36
48
60
72
0.9
–5
–14
–5
–14
–5
–14
7
–2
19
10
31
22
43
34
55
46
67
58
0.8
–13
–31
–13
–31
–13
–31
–1
–19
11
–7
23
5
35
17
47
29
59
41
0.7
–22
–54
–22
–54
–22
–54
–10
–42
2
–30
14
–18
26
–6
38
6
50
18
0.6
–34
–83
–34
–83
–34
–83
–22
–71
–10
–59
2
–47
14
–35
26
–23
38
–11
0.5
–60 –125 –60 –125 –60 –125 –48 –113 –36 –101 –24
–89
–12
–77
0
–65
12
–53
0.4
–100 –188 –100 –188 –100 –188 –88 –176 –76 –164 –64 –152 –52 –140 –40 –128 –28 –116
Notes: 1. For all input signals the total tDS and tDH required is calculated by adding the data
sheet value to the derating value listed in Table 31.
2. tDS nominal slew rate for a rising signal is defined as the slew rate between the last
crossing of VREF(DC) and the first crossing of VIH(AC)min. tDS nominal slew rate for a falling
signal is defined as the slew rate between the last crossing of VREF(DC) and the first cross-
ing of VIL(AC)max. If the actual signal is always earlier than the nominal slew rate line
between the shaded “VREF(DC) to AC region,” use the nominal slew rate for the derating
value (see Figure 27 (page 61)). If the actual signal is later than the nominal slew rate
line anywhere between shaded “VREF(DC) to AC region,” the slew rate of a tangent line
to the actual signal from the AC level to DC level is used for the derating value (see Fig-
3. tDH nominal slew rate for a rising signal is defined as the slew rate between the last
crossing of VIL(DC)max and the first crossing of VREF(DC). tDH nominal slew rate for a falling
signal is defined as the slew rate between the last crossing of VIH(DC)min and the first cross-
ing of VREF(DC). If the actual signal is always later than the nominal slew rate line
between the shaded “DC level to VREF(DC) region,” use the nominal slew rate for the de-
rating value (see Figure 29 (page 62)). If the actual signal is earlier than the nominal
slew rate line anywhere between the shaded “DC to VREF(DC) region,” the slew rate of a
tangent line to the actual signal from the DC level to VREF(DC) level is used for the derat-
ing value (see Figure 30 (page 62)).
4. Although the total setup time might be negative for slow slew rates (a valid input signal
will not have reached VIH[AC]/VIL[AC] at the time of the rising clock transition), a valid in-
put signal is still required to complete the transition and reach VIH(AC)/VIL(AC).
5. For slew rates between the values listed in this table, the derating values may be ob-
tained by linear interpolation.
6. These values are typically not subject to production test. They are verified by design and
characterization.
7. Single-ended DQS requires special derating. The values in Table 32 (page 59) are the
DQS single-ended slew rate derating with DQS referenced at VREF and DQ referenced at
the logic levels tDSb and tDHb. Converting the derated base values from DQ referenced
1Gb: x4, x8, x16 1.55V DDR2 SDRAM
Input Slew Rate Derating
PDF: 09005aef82b91d01
1GbDDR2_1_55V.PDF Rev. A 5/09 EN
58
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2009 Micron Technology, Inc. All rights reserved.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT47H128M8HQ-3EAT | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DDR2 SDRAM |
| MT47H128M8HQ-3EIT | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DDR2 SDRAM |
| MT47H128M8HQ-3EL | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DDR2 SDRAM |
| MT47H128M8HQ-3IT | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DDR2 SDRAM |
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