參數(shù)資料
型號: MT47H128M8HQ-3AT
元件分類: DRAM
英文描述: 128M X 8 DDR DRAM, 0.4 ns, PBGA60
封裝: 8 X 11.50 MM, ROHS COMPLIANT, FBGA-60
文件頁數(shù): 63/129頁
文件大小: 9252K
代理商: MT47H128M8HQ-3AT
ODT DC Electrical Characteristics
Table 13: ODT DC Electrical Characteristics
All voltages are referenced to VSS; 1.55V DDR2 SDRAM has NOM and MAX limit increase by 8% when VDD is less than 1.7V.
VDD = +1.5V to +1.9V, VDDQ = +1.5V to +1.9V. If VDD < 1.7V then VDD - 0.05V ≤ VDDQ ≤ VDD; else VDD - 0.1V ≤ VDDQ ≤ VDD.
Parameter
Symbol
Voltage
Min
Nom
Max
Units
Notes
RTT effective impedance value for 75Ω setting
EMR (A6, A2) = 0, 1
RTT1(EFF)
1.7V
60
75
90
Ω
1.5V
60
80
98
Ω
RTT effective impedance value for 150Ω setting
EMR (A6, A2) = 1, 0
RTT2(EFF)
1.7V
120
150
180
Ω
1.5V
120
160
195
Ω
RTT effective impedance value for 50Ω setting
EMR (A6, A2) = 1, 1
RTT3(EFF)
1.7V
40
50
60
Ω
1.5V
40
55
65
Ω
Deviation of VM with respect to VDDQ/2
ΔVM
–6
6
%
Notes: 1. RTT1(EFF) and RTT2(EFF) are determined by separately applying VIH(AC) and VIL(DC) to the ball
being tested, and then measuring current, I(VIH[AC]), and I(VIL[AC]), respectively.
2. Minimum IT and AT device values are derated by six percent when the devices operate
between –40°C and 0°C (TC ).
3. Measure voltage (VM) at tested ball with no load.
1Gb: x4, x8, x16 1.55V DDR2 SDRAM
ODT DC Electrical Characteristics
PDF: 09005aef82b91d01
1GbDDR2_1_55V.PDF Rev. A 5/09 EN
39
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2009 Micron Technology, Inc. All rights reserved.
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