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| 型號(hào)： | MT46V64M4TG-75E |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 64M X 4 DDR DRAM, 0.75 ns, PDSO66 |
| 封裝： | 0.400 INCH, PLASTIC, TSOP-66 |
| 文件頁(yè)數(shù)： | 41/83頁(yè) |
| 文件大?。?/td> | 2343K |
| 代理商： | MT46V64M4TG-75E |
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256Mb: x4, x8, x16
DDR SDRAM
09005aef8076894f
Micron Technology, Inc., reserves the right to change products or specifications without notice.
256MBDDRx4x8x16_2.fm - Rev. K 9/04 EN
46
2003 Micron Technology, Inc. All rights reserved.
Absolute Maximum Ratings
Stresses greater than those listed may cause perma-
nent damage to the device. This is a stress rating only,
and functional operation of the device at these or any
other conditions above those indicated in the opera-
tional sections of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
VDD Supply Voltage
Relative to Vss . . . . . . . . . . . . . . . . . . . . . . . -1V to +3.6V
VDDQ Supply Voltage
Relative to VSS . . . . . . . . . . . . . . . . . . . . . . . -1V to +3.6V
VREF and Inputs Voltage
Relative to VSS . . . . . . . . . . . . . . . . . . . . . . . -1V to +3.6V
I/O Pins Voltage
Relative to VSS . . . . . . . . . . . . . . . -0.5V to VDDQ +0.5V
Operating Temperature, TA
(ambient, Commercial). . . . . . . . . . . . . . . 0°C to +70°C
Operating Temperature, TA
(ambient, Industrial) . . . . . . . . . . . . . . . -40°C to +85°C
Storage Temperature (plastic) . . . . . . . . -55°C to +150°C
Short Circuit Output Current . . . . . . . . . . . . . . . . . . 50mA
Table 10:
DC Electrical Characteristics and Operating Conditions
(-6, -6T, -75E, -75Z, -75)
0°C
≤ T
A ≤ +70°C; VDDQ = +2.5V ±0.2V, VDD = +2.5V ±0.2V
Notes: 1–5, 16; notes appear on pages 62–65
PARAMETER/CONDITION
SYMBOL
MIN
MAX
UNITS
NOTES
Supply Voltage
VDD
2.3
2.7
V
36, 41
I/O Supply Voltage
VDDQ
2.3
2.7
V
36,41, 44
I/O Reference Voltage
VREF
0.49 x VDDQ0.51 x VDDQV
6, 44
I/O Termination Voltage (system)
VTT
VREF - 0.04
VREF + 0.04
V7, 44
Input High (Logic 1) Voltage
VIH(DC)VREF + 0.15
VDD + 0.3
V28
Input Low (Logic 0) Voltage
VIL(DC)
-0.3
VREF - 0.15
V28
INPUT LEAKAGE CURRENT
Any input 0V
≤ VIN ≤ VDD, VREF
(All other pins not under test = 0V)
II
-2
2
A
OUTPUT LEAKAGE CURRENT
(DQs are disabled; 0V
≤ VOUT ≤ VDDQ)
IOZ
-5
5
A
OUTPUT LEVELS: Full drive option - x4, x8, x16
High Current (VOUT = VDDQ - 0.373V, minimum VREF,
minimum VTT)
IOH
-16.8
-
mA
37, 39
Low Current (VOUT = 0.373V, maximum VREF, maximum VTT)
IOL
16.8
-
mA
OUTPUT LEVELS: Reduced drive option - x16 only
High Current (VOUT = VDDQ - 0.763V, minimum VREF,
minimum VTT)
IOHR
-9
-
mA
38, 39
Low Current (VOUT = 0.763V, maximum VREF, maximum VTT)
IOLR
9-
mA
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| MT46V64M4FG-75Z | 64M X 4 DDR DRAM, 0.75 ns, PBGA60 |
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| MT47H64M16HR-3IT | 64M X 16 DDR DRAM, 0.4 ns, PBGA84 |
| MT48H8M16LFB4-8IT:JTR | 8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT46V64M4TG-75Z | 制造商:MICRON 制造商全稱(chēng):Micron Technology 功能描述:DOUBLE DATA RATE DDR SDRAM |
| MT46V64M8 | 制造商:MICRON 制造商全稱(chēng):Micron Technology 功能描述:512Mb: x4, x8, x16 Double Data Rate SDRAM Features |
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