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參數(shù)資料
| 型號： | MT46V64M4TG-75E |
| 元件分類： | DRAM |
| 英文描述： | 64M X 4 DDR DRAM, 0.75 ns, PDSO66 |
| 封裝： | 0.400 INCH, PLASTIC, TSOP-66 |
| 文件頁數(shù)： | 21/83頁 |
| 文件大?。?/td> | 2343K |
| 代理商： | MT46V64M4TG-75E |
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256Mb: x4, x8, x16
DDR SDRAM
09005aef8076894f
Micron Technology, Inc., reserves the right to change products or specifications without notice.
256MBDDRx4x8x16_2.fm - Rev. K 9/04 EN
28
2003 Micron Technology, Inc. All rights reserved.
Figure 19: READ to PRECHARGE
NOTE:
1. DO n = data-out from column n.
2. Burst length = 4, or an interrupted burst of 8.
3. Three subsequent elements of data-out appear in the programmed order following DO n.
4. Shown with nominal tAC, tDQSCK, and tDQSQ.
5. READ to PRECHARGE equals two clocks, which allows two data pairs of data-out.
6. A READ command with AUTO-PRECHARGE enabled, provided tRAS (MIN) is met, would cause a precharge to be per-
formed at x number of clock cycles after the READ command, where x = BL / 2.
7. An active command to the same bank is only allowed if tRC (MIN) has been satisfied.
8. PRE = PRECHARGE command; ACT = ACTIVE command.
CK
CK#
COMMAND6
READ
NOP
PRE
NOP
ACT
ADDRESS
Bank a,
Col n
Bank a,
(a or all)
Bank a,
Row
READ
NOP
PRE
NOP
ACT
Bank a,
Col n
CL = 2
tRP
CK
CK#
COMMAND6
ADDRESS
DQ
DQS
CL = 2.5
DQ
DQS
DO
n
DO
n
T0
T1
T2
T3
T2n
T3n
T4
T5
T0
T1
T2
T3
T2n
T3n
T4
T5
Bank a,
(a or all)
Bank a,
Row
DON’T CARE
TRANSITIONING DATA
READ
NOP
Bank a,
Col n
tRP
CK
CK#
COMMAND6
ADDRESS
DQ
DQS
CL = 3
DO
n
T0
T1
T2
T3
T4n
T3n
T4
T5
PRE
NOP
ACT
Bank a,
(a or all)
NOP
Bank a,
Row
7
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MT46V64M4FG-75Z | 64M X 4 DDR DRAM, 0.75 ns, PBGA60 |
| MT47H128M8HQ-3AT | 128M X 8 DDR DRAM, 0.4 ns, PBGA60 |
| MT47H64M16HR-3IT | 64M X 16 DDR DRAM, 0.4 ns, PBGA84 |
| MT48H8M16LFB4-8IT:JTR | 8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 |
| MT48LC4M32TG-10 | 4M X 32 SYNCHRONOUS DRAM, 7 ns, PDSO54 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT46V64M4TG-75Z | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DOUBLE DATA RATE DDR SDRAM |
| MT46V64M8 | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:512Mb: x4, x8, x16 Double Data Rate SDRAM Features |
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