- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄296642 > MT46V64M4FG-75Z 64M X 4 DDR DRAM, 0.75 ns, PBGA60 PDF資料下載
參數(shù)資料
| 型號： | MT46V64M4FG-75Z |
| 元件分類： | DRAM |
| 英文描述： | 64M X 4 DDR DRAM, 0.75 ns, PBGA60 |
| 封裝： | 8 X 14 MM, PLASTIC, FBGA-60 |
| 文件頁數(shù)： | 76/83頁 |
| 文件大小： | 2343K |
| 代理商： | MT46V64M4FG-75Z |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁當前第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁
256Mb: x4, x8, x16
DDR SDRAM
09005aef8076894f
Micron Technology, Inc., reserves the right to change products or specifications without notice.
256MBDDRx4x8x16_2.fm - Rev. K 9/04 EN
78
2003 Micron Technology, Inc. All rights reserved.
Figure 50: Bank Read - With Auto Precharge
NOTE:
1. DOn = data-out from column n; subsequent elements are provided in the programmed order.
2. Burst length = 4 in the case shown.
3. Enable auto precharge.
4. ACT = ACTIVE; RA = Row Address; and BA = Bank Address.
5. NOP commands are shown for ease of illustration; other commands may be valid at these times.
6. The READ command can only be applied at T3 if tRAP is satisfied at T3.
7. tRP starts only after tRAS has been satisfied.
8. Refer to Figure 40 on page 68, Figure 41 on page 69, and Figure 42 on page 70 for detailed DQS and DQ timing.
CK
CK#
CKE
A10
BA0, BA1
tCK
tCH
tCL
tIS
tIH
tIS
tIH
IS
IH
RA
tRC
tRP7
CL = 2
DM
T0
T1
T2
T3
T4
T5
T5n
T6n
T6
T7
T8
DQ1
DQS
Case 1: tAC (MIN) and tDQSCK (MIN)
Case 2: tAC (MAX) and tDQSCK (MAX)
DQ1
DQS
tRPRE
tRPST
tDQSCK (MIN)
tDQSCK (MAX)
tAC (MIN)
tLZ (MIN)
DO
n
tHZ (MAX)
tAC (MAX)
DO
n
NOP5
COMMAND4
3
ACT
RA
Col n
READ2,6
NOP5
Bank x
RA
Bank x
ACT
Bank x
NOP5
DON’T CARE
TRANSITIONING DATA
x4: A0-A9, A11
x8: A0-A9
x16: A0-A8
x4: A12
x8: A11, A12
x16: A9, A11, A12
tRAS
tLZ(MIN)
tRCD, tRAP6
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MT47H128M8HQ-3AT | 128M X 8 DDR DRAM, 0.4 ns, PBGA60 |
| MT47H64M16HR-3IT | 64M X 16 DDR DRAM, 0.4 ns, PBGA84 |
| MT48H8M16LFB4-8IT:JTR | 8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 |
| MT48LC4M32TG-10 | 4M X 32 SYNCHRONOUS DRAM, 7 ns, PDSO54 |
| MT48V8M16LFB4-8XT | 8M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT46V64M4FJ-6 | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DOUBLE DATA RATE DDR SDRAM |
| MT46V64M4FJ-6T | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DOUBLE DATA RATE DDR SDRAM |
| MT46V64M4FJ-75Z | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DOUBLE DATA RATE DDR SDRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。