參數(shù)資料
型號(hào)： MT46V64M4FG-75Z
元件分類： DRAM
英文描述： 64M X 4 DDR DRAM, 0.75 ns, PBGA60
封裝： 8 X 14 MM, PLASTIC, FBGA-60
文件頁(yè)數(shù)： 42/83頁(yè)
文件大?。?/td> 2343K
代理商： MT46V64M4FG-75Z
256Mb: x4, x8, x16
DDR SDRAM
09005aef8076894f
Micron Technology, Inc., reserves the right to change products or specifications without notice.
256MBDDRx4x8x16_2.fm - Rev. K 9/04 EN
47
2003 Micron Technology, Inc. All rights reserved.
Table 11:
DC Electrical Characteristics and Operating Conditions (-5B DDR400)
0°C
≤ TA ≤ +70°C; VDDQ = +2.6V ±0.1V, VDD = +2.6V ±0.1V
Notes: 1–5, 16, and 53; Notes appear on page 62-65
PARAMETER/CONDITION
SYMBOL
MIN
MAX
UNITS
NOTES
Supply Voltage
VDD
2.5
2.7
V
36, 41, 52
I/O Supply Voltage
VDDQ
2.5
2.7
V
36,41, 44,
52
I/O Reference Voltage
VREF
0.49 x VDDQ
0.51 x VDDQV
6, 44
I/O Termination Voltage (system)
VTT
VREF - 0.04
VREF + 0.04
V7, 44
Input High (Logic 1) Voltage
VIH(DC)VREF + 0.15
VDD + 0.3
V28
Input Low (Logic 0) Voltage
VIL(DC)
-0.3
VREF - 0.15
V28
INPUT LEAKAGE CURRENT
Any input 0V
≤ VIN ≤ VDD, VREF PIN 0V ≤ VIN ≤ 1.35V
(All other pins not under test = 0V)
II
-2
2
A
OUTPUT LEAKAGE CURRENT
(DQs are disabled; 0V
≤ VOUT ≤ VDDQ)
IOZ
-5
5
A
OUTPUT LEVELS: Full drive option - x4, x8, x16
High Current (VOUT = VDDQ - 0.373V, minimum VREF,
minimum VTT)
IOH
-16.8
-
mA
37, 39
Low Current (VOUT = 0.373V, maximum VREF,
maximum VTT)
IOL
16.8
-
mA
OUTPUT LEVELS: Reduced drive option - x16 only
High Current (VOUT = VDDQ - 0.763V, minimum VREF,
minimum VTT)
IOHR
-9
-
mA
38, 39
Low Current (VOUT = 0.763V, maximum VREF,
maximum VTT)
IOLR
9-
mA
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