參數(shù)資料
型號: MT46V64M4FG-75Z
元件分類: DRAM
英文描述: 64M X 4 DDR DRAM, 0.75 ns, PBGA60
封裝: 8 X 14 MM, PLASTIC, FBGA-60
文件頁數(shù): 24/83頁
文件大小: 2343K
代理商: MT46V64M4FG-75Z
256Mb: x4, x8, x16
DDR SDRAM
09005aef8076894f
Micron Technology, Inc., reserves the right to change products or specifications without notice.
256MBDDRx4x8x16_2.fm - Rev. K 9/04 EN
30
2003 Micron Technology, Inc. All rights reserved.
Figure 21: WRITE Burst
NOTE:
1. DI b = data-in for column b.
2. Three subsequent elements of data-in are applied in the programmed order following DI b.
3. An uninterrupted burst of 4 is shown.
4. A10 is LOW with the WRITE command (auto precharge is disabled).
DQS
tDQSS (MAX)
tDQSS (NOM)
tDQSS (MIN)
tDQSS
DM
DQ
CK
CK#
COMMAND
WRITE
NOP
ADDRESS
Bank a,
Col b
NOP
T0
T1
T2
T3
T2n
DQS
tDQSS
DM
DQ
DQS
tDQSS
DM
DQ
DI
b
DI
b
DI
b
DON’T CARE
TRANSITIONING DATA
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