參數(shù)資料
型號(hào)： MT46V128M4P-75ZLIT:C
元件分類： DRAM
英文描述： 128M X 4 DDR DRAM, 0.75 ns, PDSO66
封裝： 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66
文件頁數(shù)： 73/94頁
文件大?。?/td> 4179K
09005aef80a1d9e7
Micron Technology, Inc., reserves the right to change products or specifications without notice.
512MBDDRx4x8x16_2.fm - Rev. J 1/06 EN
75
2000–2005 Micron Technology, Inc. All rights reserved.
512Mb: x4, x8, x16 DDR SDRAM
Notes
C. The full driver pull-up current variation from MIN to MAX process, temperature
and voltage will lie within the outer bounding lines of the V-I curve of Figure 39.
D. The driver pull-up current variation, within nominal voltage and temperature
limits, is expected, but not guaranteed, to lie within the inner bounding lines of
the V-I curve of Figure 39 on page 75.
E. The full ratio variation of the MAX to MIN pull-up and pull-down current should
be between 0.71 and 1.4 for device drain-to-source voltages from 0.1V to 1.0V at
the same voltage and temperature.
F. The full ratio variation of the nominal pull-up to pull-down current should be
unity ±10 percent, for device drain-to-source voltages from 0.1V to 1.0V.
Figure 38:
Reduced Drive Pull-Down Characteristics
Figure 39:
Reduced Drive Pull-Up Characteristics
39. The voltage levels used are derived from a minimum VDD level and the referenced test
load. In practice, the voltage levels obtained from a properly terminated bus will pro-
vide significantly different voltage values.
0
20
40
60
80
100
120
140
160
0.0
0.5
1.0
1.5
2.0
2.5
VOUT (V)
IOUT
(m
A
)
-200
-180
-160
-140
-120
-100
-80
-60
-40
-20
0
0.0
0.5
1.0
1.5
2.0
2.5
IOUT
(mA)
VDDQ - VOUT (V)
相關(guān)PDF資料
PDF描述
MT46V64M4TG-75E 64M X 4 DDR DRAM, 0.75 ns, PDSO66
MT46V64M4FG-75Z 64M X 4 DDR DRAM, 0.75 ns, PBGA60
MT47H128M8HQ-3AT 128M X 8 DDR DRAM, 0.4 ns, PBGA60
MT47H64M16HR-3IT 64M X 16 DDR DRAM, 0.4 ns, PBGA84
MT48H8M16LFB4-8IT:JTR 8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT46V128M4T67A3WC1 制造商:Micron Technology Inc 功能描述:128MX4 DDR SDRAM DIE-COM COMMERCIAL 2.5V - Trays
MT46V128M4TG-5B/D 制造商:Samsung Semiconductor 功能描述:
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*