參數(shù)資料
型號： MT46V128M4P-75ZLIT:C
元件分類： DRAM
英文描述： 128M X 4 DDR DRAM, 0.75 ns, PDSO66
封裝： 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66
文件頁數(shù)： 50/94頁
文件大小： 4179K
09005aef80a1d9e7
Micron Technology, Inc., reserves the right to change products or specifications without notice.
512MBDDRx4x8x16_2.fm - Rev. J 1/06 EN
54
2000–2005 Micron Technology, Inc. All rights reserved.
512Mb: x4, x8, x16 DDR SDRAM
Electrical Specifications
Absolute Maximum Ratings
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
Table 12:
Absolute Maximum Ratings
Parameter
Absolute Maximum Value
VDD supply voltage relative to Vss
-1V to +3.6V
VDDQ supply voltage relative to VSS
-1V to +3.6V
VREF and inputs voltage relative to VSS
-1V to +3.6V
I/O pins voltage relative to VSS
-0.5V to VDDQ +0.5V
Operating temperature, TA (ambient, Commercial)
0°C to +70°C
Operating temperature, TA (ambient, Industrial)
-
40°C to +85°C
Storage temperature (plastic)
-55°C to +150°C
Table 13:
DC Electrical Characteristics and Operating Conditions (-6, -6T, -75E, -75Z, -75)
Notes: 1–5, 16, notes appear on page 71–76; 0°C
≤ T
A ≤ +70°C; VDDQ = +2.5V ±0.2V, VDD = +2.5V ±0.2V
Parameter/Condition
Symbol
Min
Max
Units
Notes
Supply voltage
VDD
2.3
2.7
V
I/O supply voltage
VDDQ
2.3
2.7
V
I/O reference voltage
VREF
0.49 x VDDQ
0.51 x VDDQV
I/O termination voltage (system)
VTT
VREF - 0.04
VREF + 0.04
Input high (logic 1) voltage
VIH(DC)VREF + 0.15
VDD + 0.3
Input low (logic 0) voltage
VIL(DC)
-0.3
VREF - 0.15
Input Leakage Current
Any input 0V
≤ VIN ≤ VDD, VREF pin 0V ≤ VIN ≤ 1.35V
(All other pins not under test = 0V)
II
-2
2
A
Output Leakage Current
(DQs are disabled; 0V
≤ VOUT ≤ VDDQ)
IOZ
-5
5
A
Output Levels: Full drive option - x4, x8, x16
High current (VOUT = VDDQ - 0.373V, minimum VREF,
minimum VTT)
IOH
-16.8
–
mA
Low Current (VOUT = 0.373V, maximum VREF,
maximum VTT)
IOL
16.8
–
mA
Output Levels: Reduced drive option - x16 only
High current (VOUT = VDDQ - 0.763V, minimum VREF,
minimum VTT)
IOHR
-9
–
mA
Low current (VOUT = 0.763V, maximum VREF,
maximum VTT)
IOLR
9–
mA
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT46V128M4T67A3WC1 制造商:Micron Technology Inc 功能描述:128MX4 DDR SDRAM DIE-COM COMMERCIAL 2.5V - Trays
MT46V128M4TG-5B/D 制造商:Samsung Semiconductor 功能描述:
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