參數(shù)資料
型號： MT46V128M4P-75L:C
元件分類： DRAM
英文描述： 128M X 4 DDR DRAM, 0.75 ns, PDSO66
封裝： 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66
文件頁數(shù)： 84/94頁
文件大小： 4179K
09005aef80a1d9e7
Micron Technology, Inc., reserves the right to change products or specifications without notice.
512MBDDRx4x8x16_2.fm - Rev. J 1/06 EN
85
2000–2005 Micron Technology, Inc. All rights reserved.
512Mb: x4, x8, x16 DDR SDRAM
Timing Diagrams
Figure 46:
Power-Down Mode
Notes: 1. Once initialized, VREF must always be powered with in specified range.
2. If this command is a PRECHARGE (or if the device is already in the idle state), then the
power-down mode shown is precharge power-down. If this command is an ACTIVE (or if at
least one row is already active), then the power-down mode shown is active power-down.
3. No column accesses are allowed to be in progress at the time power-down is entered.
CK
CK#
COMMAND
VALID2
NOP
ADDR
CKE
DQ
DM
DQS
VALID
tCK
tCH
tCL
tIS
tIH
tIS
tIH
tIS
Enter 3
Power-Down
Mode
Exit
Power-Down
Mode
tREFC
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T0
T1
Ta0
Ta1
Ta2
T2
NOP
DON’T CARE
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VALID
1
相關(guān)PDF資料
PDF描述
MT46V128M4P-75ZLIT:C 128M X 4 DDR DRAM, 0.75 ns, PDSO66
MT46V64M4TG-75E 64M X 4 DDR DRAM, 0.75 ns, PDSO66
MT46V64M4FG-75Z 64M X 4 DDR DRAM, 0.75 ns, PBGA60
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT46V128M4T67A3WC1 制造商:Micron Technology Inc 功能描述:128MX4 DDR SDRAM DIE-COM COMMERCIAL 2.5V - Trays
MT46V128M4TG-5B/D 制造商:Samsung Semiconductor 功能描述:
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