參數(shù)資料
型號(hào)： MT46V128M4P-75L:C
元件分類： DRAM
英文描述： 128M X 4 DDR DRAM, 0.75 ns, PDSO66
封裝： 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66
文件頁(yè)數(shù)： 58/94頁(yè)
文件大?。?/td> 4179K
09005aef80a1d9e7
Micron Technology, Inc., reserves the right to change products or specifications without notice.
512MBDDRx4x8x16_2.fm - Rev. J 1/06 EN
61
2000–2005 Micron Technology, Inc. All rights reserved.
512Mb: x4, x8, x16 DDR SDRAM
Electrical Specifications
Table 23:
IDD Specifications and Conditions (x16; -5B)
0°C
≤ T
A ≤ +70°C; VDDQ = +2.6V ±0.1V, VDD = +2.6V ±0.1V
Parameter/Condition
Symbol
Max
Units
Notes
-5B
Operating Current: One bank; Active precharge;
tRC = tRC (MIN); tCK = tCK (MIN); DQ, DM, and DQS inputs changing once
per clock cycle; Address and control inputs changing once every two clock
cycles
IDD0
155
mA
Operating Current: One bank; Active-read precharge;
Burst = 4; tRC = tRC (MIN); tCK = tCK (MIN); IOUT = 0mA; Address and
control inputs changing once per clock cycle
IDD1
195
mA
Precharge Power-down Standby Current: All banks idle; Power-
down mode; tCK = tCK (MIN); CKE = (LOW)
IDD2P
5mA
Idle Standby Current: CS# = HIGH; All banks are idle;
tCK = tCK (MIN); CKE = HIGH; Address and other control inputs changing
once per clock
cycle; VIN = VREF for DQ, DQS, and DM
IDD2F
55
mA
Active Power-down Standby Current: One bank active;
Power-down mode; tCK = tCK (MIN); CKE = LOW
IDD3P
45
mA
Active Standby Current: CS# = HIGH; CKE = HIGH;
One bank active
; tRC = tRAS (MAX); tCK = tCK (MIN); DQ, DM and DQS inputs
changing twice per clock cycle; Address and other control inputs changing
once per clock cycle
IDD3N
60
mA
Operating Current: Burst = 2; Reads; Continuous burst;
One bank active; Address and control inputs changing once per clock cycle;
tCK = tCK (MIN); IOUT = 0mA
IDD4R
210
mA
Operating Current: Burst = 2; Writes; Continuous burst;
One bank active; Address and control inputs changing once per clock cycle;
tCK = tCK (MIN); DQ, DM, and DQS inputs changing twice per clock cycle
IDD4W
215
mA
Auto Refresh Burst Current:
tREFC = tRFC(MIN)
IDD5
345
mA
tREFC = 7.8s
IDD5A
11
mA
Self Refresh Current: CKE
≤ 0.2V
Standard
IDD6
6mA
Low Power (L)
IDD6A
4mA
Operating Current: Four bank interleaving READs
(Burst = 4) with auto precharge, tRC = minimum tRC allowed;
tCK = tCK (MIN); Address and control inputs change only during active READ
or WRITE commands
IDD7
480
mA
相關(guān)PDF資料
PDF描述
MT46V128M4P-75ZLIT:C 128M X 4 DDR DRAM, 0.75 ns, PDSO66
MT46V64M4TG-75E 64M X 4 DDR DRAM, 0.75 ns, PDSO66
MT46V64M4FG-75Z 64M X 4 DDR DRAM, 0.75 ns, PBGA60
MT47H128M8HQ-3AT 128M X 8 DDR DRAM, 0.4 ns, PBGA60
MT47H64M16HR-3IT 64M X 16 DDR DRAM, 0.4 ns, PBGA84
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT46V128M4T67A3WC1 制造商:Micron Technology Inc 功能描述:128MX4 DDR SDRAM DIE-COM COMMERCIAL 2.5V - Trays
MT46V128M4TG-5B/D 制造商:Samsung Semiconductor 功能描述:
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*