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參數資料
| 型號： | MT46V128M4P-75L:C |
| 元件分類： | DRAM |
| 英文描述： | 128M X 4 DDR DRAM, 0.75 ns, PDSO66 |
| 封裝： | 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 |
| 文件頁數： | 29/94頁 |
| 文件大?。?/td> | 4179K |
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Micron Technology, Inc., reserves the right to change products or specifications without notice.
512MBDDRx4x8x16_2.fm - Rev. J 1/06 EN
35
2000–2005 Micron Technology, Inc. All rights reserved.
512Mb: x4, x8, x16 DDR SDRAM
Operations
WRITEs
WRITE bursts are initiated with a WRITE command, as shown in Figure 20 on page 36.
The starting column and bank addresses are provided with the WRITE command, and
auto precharge is either enabled or disabled for that access. If auto precharge is enabled,
the row being accessed is precharged at the completion of the burst and after the tWR
time.
Note:
For the WRITE commands used in the following illustrations, auto precharge is dis-
abled.
During WRITE bursts, the first valid data-in element will be registered on the first rising
edge of DQS following the WRITE command, and subsequent data elements will be reg-
istered on successive edges of DQS. The LOW state on DQS between the WRITE com-
mand and the first rising edge is known as the write preamble; the LOW state on DQS
following the last data-in element is known as the write postamble.
The time between the WRITE command and the first corresponding rising edge of
DQS (tDQSS) is specified with a relatively wide range (from 75 percent to 125 per-
cent of one clock cycle). All of the WRITE diagrams show the nominal case, and
where the two extreme cases (i.e., tDQSS [MIN] and tDQSS [MAX]) might not be intui-
tive, they have also been included. Figure 21 on page 37 shows the nominal case and
the extremes of tDQSS for BL = 4. Upon completion of a burst, assuming no other
commands have been initiated, the DQ will remain High-Z and any additional input
data will be ignored.
Data for any WRITE burst may be concatenated with or truncated with a subsequent
WRITE command. In either case, a continuous flow of input data can be maintained.
The new WRITE command can be issued on any positive edge of clock following the pre-
vious WRITE command. The first data element from the new burst is applied after either
the last element of a completed burst or the last desired data element of a longer burst
which is being truncated. The new WRITE command should be issued x cycles after the
first WRITE command, where x equals the number of desired data element pairs (pairs
are required by the 2n-prefetch architecture).
Figure 22 on page 38 shows concatenated bursts of 4. An example of nonconsecutive
WRITEs is shown in Figure 23 on page 39. Full-speed random write accesses within a
page or pages can be performed as shown in Figure 24 on page 40.
相關PDF資料 |
PDF描述 |
|---|---|
| MT46V128M4P-75ZLIT:C | 128M X 4 DDR DRAM, 0.75 ns, PDSO66 |
| MT46V64M4TG-75E | 64M X 4 DDR DRAM, 0.75 ns, PDSO66 |
| MT46V64M4FG-75Z | 64M X 4 DDR DRAM, 0.75 ns, PBGA60 |
| MT47H128M8HQ-3AT | 128M X 8 DDR DRAM, 0.4 ns, PBGA60 |
| MT47H64M16HR-3IT | 64M X 16 DDR DRAM, 0.4 ns, PBGA84 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MT46V128M4T67A3WC1 | 制造商:Micron Technology Inc 功能描述:128MX4 DDR SDRAM DIE-COM COMMERCIAL 2.5V - Trays |
| MT46V128M4TG-5B/D | 制造商:Samsung Semiconductor 功能描述: |
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