參數(shù)資料
型號(hào)： MT46V128M4FN-75E:C
元件分類(lèi)： DRAM
英文描述： 128M X 4 DDR DRAM, 0.75 ns, PBGA60
封裝： 10 X 12.50 MM, FBGA-60
文件頁(yè)數(shù)： 72/94頁(yè)
文件大?。?/td> 4179K
09005aef80a1d9e7
Micron Technology, Inc., reserves the right to change products or specifications without notice.
512MBDDRx4x8x16_2.fm - Rev. J 1/06 EN
74
2000–2005 Micron Technology, Inc. All rights reserved.
512Mb: x4, x8, x16 DDR SDRAM
Notes
D. The driver pull-up current variation within nominal limits of voltage and temper-
ature is expected, but not guaranteed, to lie within the inner bounding lines of the
E. The full ratio variation of MAX to MIN pull-up and pull-down current should be
between 0.71 and 1.4, for drain-to-source voltages from 0.1V to 1.0V at the same
voltage and temperature.
F. The full ratio variation of the nominal pull-up to pull-down current should be
unity ±10 percent, for device drain-to-source voltages from 0.1V to 1.0V.
Figure 36:
Full Drive Pull-Down Characteristics
Figure 37:
Full Drive Pull-Up Characteristics
38. Reduced output drive curves:
A. The full driver pull-down current variation from MIN to MAX process, tempera-
ture, and voltage will lie within the outer bounding lines of the V-I curve of
B. The driver pull-down current variation, within nominalvoltage and temperature
limits, is expected, but not guaranteed, to lie within the inner bounding lines of
the V-I curve of Figure 38 on page 75.
0
20
40
60
80
100
120
140
160
0.0
0.5
1.0
1.5
2.0
2.5
VOUT (V)
IOUT
(m
A
)
-200
-180
-160
-140
-120
-100
-80
-60
-40
-20
0
0.0
0.5
1.0
1.5
2.0
2.5
IOUT
(mA)
VDDQ - VOUT (V)
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