參數資料
型號: MT46H128M32LFCM-5IT:A
元件分類: DRAM
英文描述: 128M X 32 DDR DRAM, 5 ns, PBGA90
封裝: 10 X 13 MM, GREEN, PLASTIC, VFBGA-90
文件頁數: 103/106頁
文件大?。?/td> 3431K
Figure 55: Bank Write – With Auto Precharge
CK
CK#
CKE
A10
BA0, BA1
tCK
tCH
tCL
tIS
tIH
tIS
tIH
tIS tIH
Row
tRCD
tRAS
tRP
tWR
T0
T1
T2
T3
T4
T5
T5n
T6
T7
T8
T4n
NOP4
Command
Note 3
ACTIVE
Row
Col n
WRITE2
NOP4
Bank x
NOP4
Bank x
NOP4
tDQSL tDQSH tWPST
DQ1
DQS
DM
DIN
b
tDS
tDH
tDQSS (NOM)
Don’t Care
Transitioning Data
tWPRES
tWPRE
Address
Notes: 1. NOP commands are shown for ease of illustration; other commands may be valid at
these times.
2. BL = 4 in the case shown.
3. Enable auto precharge.
4. DINn = data-out from column n.
2Gb: x16, x32 Mobile LPDDR SDRAM
Auto Precharge
PDF: 09005aef83a73286
2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN
96
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2009 Micron Technology, Inc. All rights reserved.
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