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參數(shù)資料
| 型號： | MSM8129W-35 |
| 元件分類： | SRAM |
| 英文描述： | 128K X 8 STANDARD SRAM, 35 ns, CQCC32 |
| 封裝： | CERAMIC, LCC-32 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 74K |
| 代理商： | MSM8129W-35 |
ISSUE 2.0 April 2001
MSM8129 - 020/025/30
2
Absolute Maximum Ratings (1)
Voltage on any pin relative to V
SS
(2)
V
T
-0.5
to
+7.0
V
Power Dissipation
P
T
1W
Storage Temperature
T
STG
-55
to
+150
OC
Notes : (1) Stresses above those listed may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
DC OPERATING CONDITIONS
Recommended Operating Conditions
Parameter
Symbol
min
typ
max
unit
Supply Voltage
V
CC
4.5
5.0
5.5
V
Input High Voltage
V
IH
2.2
-
6.0
V
Input Low Voltage
V
IL
-0.3
-
0.8
V
Operating Temperature
T
A
0-
70
o
C
T
AI
-40
-
85
o
C
(I suffix)
T
AM
-55
-
125
o
C
(M, MB suffix)
DC Electrical Characteristics (V
CC = 5.0V±10%, TA=-55°C to +125°C)
Parameter
Symbol Test Condition
min
typ
max
Unit
Input Leakage Current
I
LI
V
IN=0V to VCC
-2
-
2
A
Output Leakage Current
I
LO
CS=V
IH, VI/O=0V to VCC, OE=VIH or WE=VIL
-2
-
2
A
Operating Supply Current
I
CC1
CS1=V
IL,CS2= VIN,IOUT=0mA
-
170
mA
Standby Supply Current
I
SB
CS1=V
IH,CS2=VIL,VIN=VIH or VIL
-
30
mA
Output Voltage
V
OL
I
OL=8.0mA
-
0.4
V
OH
I
OH=-4.0mA
2.4
-
V
Capacitance (V
CC=5V±10%,TA=25°C)
Parameter
Symbol
Test Condition
typ
max
Unit
Input Capacitance:
C
IN
V
IN = 0V
-
6
pF
I/O Capacitance:
C
I/O
V
I/O= 0V
-
8
pF
Note : This parameter is sampled and not 100% tested.
AC Test Conditions
Output Load
* Input pulse levels : 0V to 3.0V
* Input rise and fall times : 3ns
* Input and Output timing reference levels: 1.5V
* Output load: See Load Diagram
* V
cc=5V±10%
166
30pF
I/O Pin
1.76V
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