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參數(shù)資料
| 型號： | K9F5608U0B-YIB0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
| 中文描述： | 32M的× 8位，16米x 16位NAND閃存 |
| 文件頁數(shù)： | 13/34頁 |
| 文件大?。?/td> | 604K |
| 代理商： | K9F5608U0B-YIB0 |
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FLASH MEMORY
13
K9F5616U0B-DCB0,DIB0,HCB0,HIB0
K9F5608U0B-DCB0,DIB0,HCB0,HIB0
K9F5608U0B-YCB0,YIB0,PCB0,PIB0
K9F5616U0B-YCB0,YIB0,PCB0,PIB0
K9F5608U0B-VCB0,VIB0,FCB0,FIB0
AC Characteristics for Operation
NOTE
:
1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
2. To break the sequential read cycle, CE must be held high for longer time than tCEH.
3. The time to Ready depends on the value of the pull-up resistor tied R/B pin.
Parameter
Symbol
Min
Max
Unit
Data Transfer from Cell to Register
t
R
-
10
μ
s
ALE to RE Delay
t
AR
10
-
ns
CLE to RE Delay
t
CLR
10
-
ns
Ready to RE Low
t
RR
20
-
ns
RE Pulse Width
t
RP
25
-
ns
WE High to Busy
t
WB
-
100
ns
Read Cycle Time
t
RC
50
-
ns
CE Access Time
t
CEA
-
45
ns
RE Access Time
t
REA
-
30
ns
RE High to Output Hi-Z
t
RHZ
-
30
ns
CE High to Output Hi-Z
t
CHZ
-
20
ns
RE or CE High to Output hold
t
OH
15
-
RE High Hold Time
t
REH
15
-
ns
Output Hi-Z to RE Low
t
IR
0
-
ns
WE High to RE Low
t
WHR
60
-
ns
Device Resetting Time
(Read/Program/Erase)
t
RST
-
5/10/500
(1)
μ
s
K9F5608U0B-
Y,P,V,F only
Last RE High to Busy(at sequential read)
t
RB
-
100
ns
CE High to Ready(in case of interception by CE at read)
t
CRY
-
50 +tr(R/B)
(3)
ns
CE High Hold Time(at the last serial read)
(2)
t
CEH
100
-
ns
AC Timing Characteristics for Command / Address / Data Input
NOTE
:
1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.
Parameter
Symbol
Min
Max
Unit
CLE Set-up Time
t
CLS
0
-
ns
CLE Hold Time
t
CLH
10
-
ns
CE Setup Time
t
CS
0
.-
ns
CE Hold Time
t
CH
10
-
ns
WE Pulse Width
t
WP
25
(1)
-
ns
ALE Setup Time
t
ALS
0
-
ns
ALE Hold Time
t
ALH
10
-
ns
Data Setup Time
t
DS
20
-
ns
Data Hold Time
t
DH
10
-
ns
Write Cycle Time
t
WC
45
-
ns
WE High Hold Time
t
WH
15
-
ns
相關PDF資料 |
PDF描述 |
|---|---|
| K9F5608U0B-YCB0 | 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
| K9F5608U0B-DCB0 | 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
| K9F5608U0B-DIB0 | 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
| K9F5608U0B-FCB0 | 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
| K9F5608U0B-FIB0 | 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K9F5608U0C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit 16M x 16 Bit NAND Flash Memory |
| K9F5608U0C-D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit 16M x 16 Bit NAND Flash Memory |
| K9F5608U0C-DCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5608U0C-DIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5608U0C-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata |
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