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參數(shù)資料
| 型號(hào)： | MRF7S21110HR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, CASE 465-06, NI-780, 3 PIN |
| 文件頁數(shù)： | 10/12頁 |
| 文件大?。?/td> | 403K |
| 代理商： | MRF7S21110HR3 |
MRF7S21110HR3 MRF7S21110HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
60
10
1
100
40
50
10
30
20
7th Order
5th Order
3rd Order
400
VDD = 28 Vdc, IDQ = 1100 mA
f1 = 2135 MHz, f2 = 2145 MHz
Two Tone Measurements, 10 MHz Tone Spacing
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
TWO TONE SPACING (MHz)
10
VDD = 28 Vdc, Pout = 90 W (PEP), IDQ = 1100 mA
Two Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
IM3 L
0
20
40
1
100
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
60
30
IM3 U
IM5 U
IM5 L
IM7 L
IM7 U
50
Figure 9. Output Peak-to-Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
1
3
5
Actual
0
2
OUTPUT
COMPRESSION
A
T
THE
0.01%
PROBABILITY
ON
CCDF
(dB)
3 dB = 75 W
20
40
60
30
60
45
40
35
η
D,
DRAIN
EFFICIENCY
(%)
VDD = 28 Vdc, IDQ = 1100 mA
f = 2140 MHz, Input PAR = 7.5 dB
1 dB = 31.27 W
2 dB = 45.15 W
100
Figure 10. Digital Predistortion Correction versus
ACPR and Output Power
Pout, OUTPUT POWER (dBm)
50
70
0
36
42
38
30
40
50
60
ACPR,
UPPER
AND
LOWER
RESUL
TS
(dBc)
44
46
Uncorrected, Upper and Lower
DPD Corrected
No Memory Correction
DPD Corrected
with Memory Correction
VDD = 28 Vdc, IDQ = 1100 mA, f = 2140 MHz
Single Carrier WCDMA, PAR = 7.5 dB, ACPR @
±5 MHz Offset in 3.84 MHz Integrated Bandwidth
48
300
12
19
0
70
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
VDD = 28 Vdc
IDQ = 1100 mA
f = 2140 MHz
TC = 30_C
25
_C
85
_C
30
_C
25
_C
85
_C
10
1
18
17
16
15
50
40
30
20
10
η
D,
DRAIN
EFFICIENCY
(%)
Gps
ηD
G
ps
,POWER
GAIN
(dB)
100
14
20
10
40
70
10
4
80
50
55
13
60
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF7S21110HR5 | 功能描述:射頻MOSFET電源晶體管 HV7 33W WCDMA NH780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S21110HS | 制造商:Freescale Semiconductor 功能描述: |
| MRF7S21110HSR3 | 功能描述:射頻MOSFET電源晶體管 HV7 33W WCDMA NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S21110HSR5 | 功能描述:射頻MOSFET電源晶體管 HV7 33W WCDMA NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S21150HR3 | 功能描述:射頻MOSFET電源晶體管 HV7 2.1GHZ 150W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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