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參數資料
| 型號： | MRF6S19200HR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN |
| 文件頁數： | 6/12頁 |
| 文件大小： | 404K |
| 代理商： | MRF6S19200HR3 |
MRF6S19200HR3 MRF6S19200HSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1600 mA, 1930-1990 MHz Bandwidth
IMD Symmetry @ 130 W PEP, Pout where IMD Third Order
Intermodulation
` 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
—
20
—
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
50
—
MHz
Gain Flatness in 60 MHz Bandwidth @ Pout = 56 W Avg.
GF
—
0.6
—
dB
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ Pout = 130 W CW
Φ
—
1.94
—
°
Average Group Delay @ Pout = 130 W CW, f = 1960 MHz
Delay
—
2.44
—
ns
Part-to-Part Insertion Phase Variation @ Pout = 130 W CW,
f = 1960 MHz, Six Sigma Window
ΔΦ
—
59.4
—
°
Gain Variation over Temperature
(-30°C to +85°C)
ΔG
—
0.04
—
dB/°C
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF6S19200HR5 | 功能描述:射頻MOSFET電源晶體管 HV6 1.9GHZ 56W 28V NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S19200HSR3 | 功能描述:射頻MOSFET電源晶體管 HV6 1.9GHZ 56W 28V NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S19200HSR5 | 功能描述:射頻MOSFET電源晶體管 HV6 1.9GHZ 56W 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S20010GNR1 | 功能描述:射頻MOSFET電源晶體管 HV6 2GHZ 10W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S20010GNR1-CUT TAPE | 制造商:Freescale 功能描述:MRF6S20010 Series 1.6 to 2.2 GHz 28 V 10 W RF Power N-Ch Mosfet - TO-270 |
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