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參數(shù)資料
| 型號： | MRF6S19120HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN |
| 文件頁數(shù)： | 10/11頁 |
| 文件大?。?/td> | 456K |
| 代理商： | MRF6S19120HSR3 |
8
RF Device Data
Freescale Semiconductor
MRF6S19120HR3 MRF6S19120HSR3
Figure 15. Series Equivalent Source and Load Impedance
f
MHz
Zsource
Ω
Zload
Ω
1930
1960
1990
1.52 - j1.77
1.38 - j1.20
1.51 - j1.37
3.03 - j5.14
2.94 - j4.54
2.75 - j4.34
VDD = 28 Vdc, IDQ = 1000 mA, Pout = 19 W Avg.
Zo = 10 Ω
Zload
f = 2020 MHz
Zsource
2020
1.41 - j1.11
2.75 - j4.18
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Z source
Z load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
f = 1930 MHz
f = 2020 MHz
f = 1930 MHz
LIFETIME
BUY
LAST
ORDER
4
APR
09
LAST
SHIP
3
OCT
09
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| MRF6S19120HSR5 | 功能描述:射頻MOSFET電源晶體管 HV6 19W N-CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S19140HR3 | 功能描述:射頻MOSFET電源晶體管 HV6 28V 29W LDMOS NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S19140HR3_07 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S19140HR5 | 功能描述:射頻MOSFET電源晶體管 HV6 28V 29W LDMOS NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S19140HS | 制造商:Freescale Semiconductor 功能描述: |
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