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參數(shù)資料
| 型號： | MRF21125R3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-880, CASE 465B-02, 2 PIN |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 437K |
| 代理商： | MRF21125R3 |
MRF21125R3 MRF21125SR3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Two-Tone Performance (In Freescale Test Fixture)
Common-Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 125 W PEP, IDQ = 1600 mA, f1 = 2110 MHz,
f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Gps
—
12
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 125 W PEP, IDQ = 1600 mA, f1 = 2110 MHz,
f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
η
—
34
—
%
Intermodulation Distortion
(VDD = 28 Vdc, Pout = 125 W PEP, IDQ = 1600 mA, f1 = 2110 MHz,
f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
IMD
—
-30
—
dBc
Typical CW Performance
Common-Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 125 W CW, IDQ = 1600 mA, f1 = 2170.0 MHz)
Gps
—
11.5
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 125 W CW, IDQ = 1600 mA, f = 2170.0 MHz)
η
—
46
—
%
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF21125S | 制造商:Motorola Inc 功能描述: 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391BVAR |
| MRF21125SR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF21180 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistor |
| MRF21180R6 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistor |
| MRF21180R6_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
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