參數(shù)資料
型號: MRF21120
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: RF Power MOSFETs(RF功率MOS場效應(yīng)管)
中文描述: 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: NI-1230, CASE 375D-04, 5 PIN
文件頁數(shù): 6/12頁
文件大?。?/td> 162K
代理商: MRF21120
MRF21120 MRF21120S
6
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
Figure 3. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
9
0.10
10
Figure 4. Intermodulation Distortion
versus Output Power
MARKER 1 [T1]
–22.77 dBm
2.17000000 GHz
Pout, OUTPUT POWER (WATTS) PEP
1.0
0.10
13
Figure 5. Class AB Broadband
Circuit Performance
13
f, FREQUENCY (MHz)
5
2100
Figure 6. 2.17 GHz W
CDMA Mask at
14 Watts (Avg.), 5 MHz Offset, 15 DTCH, 1 Perch
Center 2.17 GHz
Figure 7. Power Gain, Efficiency, ACPR
versus Output Power (W
CDMA)
Pout, OUTPUT POWER (WATTS) AVG.
10
12
14
14
7
11
2140
11
2200
1.0
8
10
2
100
12
I
–60
–20
–50
–30
–40
–32
40
–26
–30
50
45
35
12
9
2180
2120
2160
Gps
η
–100
–60
–30
–80
–40
–20
–10
10
Figure 8. Power Gain, Efficiency, IMD
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
10
12
13
7
100
1.0
9
11
5
0.10
,
Gp
1800 mA
1500 mA
1300 mA
1100 mA
1000 mA
850 mA
600 mA
VDD = 28 Vdc
f1 = 2170.0 MHz
f2 = 2170.1 MHz
1.0
10
100
1800 mA
600 mA
850 mA
1100 mA
1000 mA
1300 mA
1500 mA
VDD = 28 Vdc
f1 = 2170.0 MHz
f2 = 2170.1 MHz
–28
–24
I
D
η
,
10
6
8
VSWR
IMD
VDD = 28 V, IDQ = 2 x 500 mA
Two–Tone, 100 kHz Tone Spacing
V
2.0
1.0
1.5
1.5 MHz
Span 15 MHz
–70
–90
–50
c11
c11
c0
c0
cu1
cu1
1RM
Ref Lv1
–5 dBm
RBW
VBW
SWT
30 kHZ
1 MHz
2 s
RF Att
Unit
10 dB
dBm
4
6
η
,
20
–40
60
40
0
–60
–20
Gps
η
ACPR UP
ACPR DOWN
VDD = 28 V
IDQ = 2 x 750 mA
f = 2170 MHz
η
,
I
6
8
10
20
–60
80
40
0
–80
–40
–20
60
Gps
η
IMD
VDD = 28 V, IDQ = 2 x 500 mA
f = 2170.0 MHz, f2 = 2170.1 MHz
1
CH PWR
ACR UP
ACR LOW
1 [T1]
A
–22.77 dBm
2.17000000 GHz
–2.95 dBm
–45.14 dB
–45.45 dB
,
Gp
,
Gp
,
Gp
相關(guān)PDF資料
PDF描述
MRF21125 RF POWER FIELD EFFECT TRANSISTORS
MRF21125SR3 RF POWER FIELD EFFECT TRANSISTORS
MRF21125S RF POWER FIELD EFFECT TRANSISTORS
MRF255PHT RF Power Field-Effect Transistor
MRF255 N-CHANNEL BROADBAND RF POWER FET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF21120R6 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF21125 制造商:Motorola Inc 功能描述:
MRF21125R3 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述:
MRF21125S 制造商:Motorola Inc 功能描述: 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391BVAR
MRF21125SR3 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors