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參數(shù)資料
| 型號(hào)： | MRF21120 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF Power MOSFETs(RF功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-1230, CASE 375D-04, 5 PIN |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大?。?/td> | 162K |
| 代理商： | MRF21120 |
3
MRF21120 MRF21120S
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
—
continued
(TC = 25
°
C unless otherwise noted)
Characteristic
Unit
Max
Typ
Min
Symbol
Drain Efficiency
(VDD = 28 Vdc, Pout = 120 W CW, IDQ = 2
f1 = 2170.0 MHz)
500 mA,
η
—
42
—
%
Output Mismatch Stress
(VDD = 28 Vdc, Pout = 120 W CW, IDQ = 2
f = 2.17 GHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
500 mA,
Ψ
No Degradation In Output Power
Before and After Test
(1) Each side of device measured separately.
(2) Device measured in push
–
pull configuration.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF21125 | RF POWER FIELD EFFECT TRANSISTORS |
| MRF21125SR3 | RF POWER FIELD EFFECT TRANSISTORS |
| MRF21125S | RF POWER FIELD EFFECT TRANSISTORS |
| MRF255PHT | RF Power Field-Effect Transistor |
| MRF255 | N-CHANNEL BROADBAND RF POWER FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF21120R6 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF21125 | 制造商:Motorola Inc 功能描述: |
| MRF21125R3 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF21125S | 制造商:Motorola Inc 功能描述: 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391BVAR |
| MRF21125SR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
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