參數(shù)資料
型號： MRF21120
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： RF Power MOSFETs(RF功率MOS場效應(yīng)管)
中文描述： 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： NI-1230, CASE 375D-04, 5 PIN
文件頁數(shù)： 2/12頁
文件大?。?/td> 162K
代理商： MRF21120
MRF21120 MRF21120S
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(1)
Drain
–
Source Breakdown Voltage
(VGS = 0, ID = 20
μ
Adc)
V(BR)DSS
65
—
—
Vdc
Gate
–
Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc )
IGSS
—
—
1
μ
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0)
IDSS
—
—
10
μ
Adc
ON CHARACTERISTICS
(1)
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
gfs
—
4.8
—
S
Gate Threshold Voltage
(VDS = 10 V, ID = 200
μ
A)
VGS(th)
2.5
3
3.8
Vdc
Gate Quiescent Voltage
(VDS = 28 V, ID = 500 mA)
VGS(Q)
3
3.9
5
Vdc
Drain
–
Source On
–
Voltage
(VGS = 10 V, ID = 2 A)
VDS(on)
—
0.38
0.5
Vdc
DYNAMIC CHARACTERISTICS
(1)
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Crss
—
2.8
—
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture) (2)
Common
–
Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
500 mA, MRF21120
MRF21120S
Gps
10.5
10.4
11.2
11.2
—
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
500 mA,
η
30
34.5
—
%
Intermodulation Distortion
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
500 mA, MRF21120
MRF21120S
IMD
—
—
–
31
–
31
–
28
–
27
dB
Input Return Loss
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
500 mA,
IRL
9
12
—
dB
Common
–
Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
500 mA,
Gps
—
11.5
—
dB
Common
–
Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
500 mA,
Gps
—
11.5
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
500 mA,
η
—
34.5
—
%
Intermodulation Distortion
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
500 mA,
IMD
—
–
31
—
dB
Input Return Loss
(VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
500 mA,
IRL
—
12
—
dB
Power Output, 1 dB Compression Point
(VDD = 28 Vdc, CW, IDQ = 2
500 mA, f1 = 2170.0 MHz)
P1dB
—
120
—
Watts
Common
–
Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 120 W CW, IDQ = 2
f1 = 2170.0 MHz)
500 mA,
Gps
—
10.5
—
dB
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MRF21120R6 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
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