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參數(shù)資料
| 型號： | MRF19060R3 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF POWER FIELD EFFECT TRANSISTORS |
| 中文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-780, CASE 465-06, 2 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 387K |
| 代理商： | MRF19060R3 |
MRF19060 MRF19060R3 MRF19060SR3
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 10
μ
Adc)
V
(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
6
μ
Adc
Gate–Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
—
—
1
μ
Adc
ON CHARACTERISTICS
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
g
fs
—
4.7
—
S
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 300
μ
Adc)
VGS
(th)
2
—
4
V
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 500 mAdc)
V
GS(Q)
2.5
3.9
4.5
V
Drain–Source On–Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
V
DS(on)
—
0.27
—
V
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(V
DS
= 26 Vdc, V
GS
= 0, f = 1 MHz)
C
rss
—
2.7
—
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system)
Two–Tone Common–Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 500 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
G
ps
11
12.5
—
dB
Two–Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 500 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
η
33
36
—
%
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 500 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
IMD
—
–31
–28
dBc
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 500 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
IRL
—
–12
—
dB
P
out
, 1 dB Compression Point
(V
DD
= 26 Vdc, P
out
= 60 W CW, f = 1990 MHz)
P1dB
—
60
—
W
Output Mismatch Stress
(V
DD
= 26 Vdc, P
out
= 60 W CW, I
DQ
= 500 mA,
f = 1930 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF19060S | 制造商:Motorola Inc 功能描述: 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391BVAR |
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| MRF19085 | 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-502A |
| MRF19085LR3 | 功能描述:IC MOSFET RF N-CHAN NI-780 RoHS:是 類別:分離式半導體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF19085LR5 | 功能描述:IC MOSFET RF N-CHAN NI-780 RoHS:是 類別:分離式半導體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
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