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參數(shù)資料
| 型號(hào)： | MMVL809T1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Silicon Tuning Diode |
| 中文描述： | UHF BAND, 5.3 pF, 20 V, SILICON, VARIABLE CAPACITANCE DIODE |
| 封裝： | PLASTIC, CASE 477-02, 2 PIN |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大小： | 51K |
| 代理商： | MMVL809T1G |
MMVL809T1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(I
R
= 10 Adc)
V
(BR)R
20
Vdc
Reverse Voltage Leakage Current
(V
R
= 15 Vdc)
I
R
50
nAdc
C
t
, Diode Capacitance
V
R
= 2.0 Vdc, f = 1.0 MHz
pF
Q, Figure of Merit
V
R
= 3.0 Vdc
f = 500 MHz
C
R
, Capacitance Ratio
C
2
/C
8
(Note 2)
f = 1.0 MHz
Device
Min
Typ
Max
Typ
Min
Max
MMVL809T1
4.5
5.3
6.1
75
1.8
2.6
2. C
R
is the ratio of C
t
measured at 2.0 Vdc divided by C
t
measured at 8.0 Vdc.
TYPICAL CHARACTERISTICS
Figure 1. Diode Capacitance
10
8
6
4
2
0
0.5
1
10
15
V
R
, REVERSE VOLTAGE (VOLTS)
C
Figure 2. Figure of Merit
f, FREQUENCY (GHz)
Figure 3. Series Resistance
T
A
, AMBIENT TEMPERATURE (
°
C)
Q
0.1
1000
100
10
1.0
10
C 1.04
0.97
75
1.02
1.00
0.98
0.96
25
+25
+75
+125
V
R
= 3.0 Vdc
f = 1.0 MHz
V
R
= 3 Vdc
T
A
= 25
°
C
50
0
+50
+100
1.03
1.01
0.99
8
2
3
5
9
7
5
3
1
4
Figure 4. Diode Capacitance
f, FREQUENCY (GHz)
R
1000
0
600
400
0.4
0.8
1.2
V
R
= 3.0 Vdc
f = 1.0 MHz
0.2
0.6
1.0
800
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