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| 型號： | MMBT2907LT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC, CASE 318-08, 3 PIN |
| 文件頁數(shù)： | 12/24頁 |
| 文件大?。?/td> | 388K |
| 代理商： | MMBT2907LT1 |
MMBT2907LT1 MMBT2907ALT1
2–320
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –0.1 mAdc, VCE = –10 Vdc)
MMBT2907
MMBT2907A
(IC = –1.0 mAdc, VCE = –10 Vdc)
MMBT2907
MMBT2907A
(IC = –10 mAdc, VCE = –10 Vdc)
MMBT2907
MMBT2907A
(IC = –150 mAdc, VCE = –10 Vdc) (3)
MMBT2907
MMBT2907A
(IC = –500 mAdc, VCE = –10 Vdc) (3)
MMBT2907
MMBT2907A
hFE
35
75
50
100
75
100
—
100
30
50
—
300
—
Collector – Emitter Saturation Voltage (3)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
VCE(sat)
—
–0.4
–1.6
Vdc
Base – Emitter Saturation Voltage (3)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
VBE(sat)
—
–1.3
–2.6
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (3),(4)
(IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz)
fT
200
—
MHz
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
—
8.0
pF
Input Capacitance
(VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz)
Cibo
—
30
pF
SWITCHING CHARACTERISTICS
Turn–On Time
(V
30 Vd
I
150
Ad
ton
—
45
Delay Time
(VCC = –30 Vdc, IC = –150 mAdc,
IB1 = –15 mAdc)
td
—
10
ns
Rise Time
IB1
15 mAdc)
tr
—
40
Turn–Off Time
(V
6 0 Vd
I
150
Ad
toff
—
100
Storage Time
(VCC = –6.0 Vdc, IC = –150 mAdc,
IB1 = IB2 = –15 mAdc)
ts
—
80
ns
Fall Time
IB1 IB2
15 mAdc)
tf
—
30
3. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
0
–16 V
200 ns
50
1.0 k
200
–30 V
TO OSCILLOSCOPE
RISE TIME
≤ 5.0 ns
+15 V
–6.0 V
1.0 k
37
50
1N916
1.0 k
200 ns
–30 V
TO OSCILLOSCOPE
RISE TIME
≤ 5.0 ns
INPUT
Zo = 50
PRF = 150 PPS
RISE TIME
≤ 2.0 ns
P.W. < 200 ns
INPUT
Zo = 50
PRF = 150 PPS
RISE TIME
≤ 2.0 ns
P.W. < 200 ns
Figure 1. Delay and Rise Time Test Circuit
Figure 2. Storage and Fall Time Test Circuit
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