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參數(shù)資料
| 型號(hào)： | MGF0917A |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | L & S BAND GaAs FET [ SMD non ? matched ] |
| 中文描述： | 蜇 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 43K |
| 代理商： | MGF0917A |
Mitsubishi Electric June/2004
MGF0917A TYPICAL CHARACTERISTICS
Po,Gp,PAE vs.Pin
0
5
10
15
20
25
30
-15
-10
-5
0
5
10
Pin(dBm)
0
10
20
30
40
50
60
G
Vds=10V
Id(off)=75mA
f=1.9GHz
Po
Gp
PAE
Pi(SCL) vs.Po(SCL),IM3
-20
-15
-10
-5
0
5
10
15
20
25
30
-20
-15
-10
-5
0
5
10
15
Pin(SCL)(dBm)
P
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
I
VD=10V
ID=75mA
f1=1.90GHz
f2=1.91GHz
Po
IM3
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| MGF0917A_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF0918A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF0918A_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:L & S BAND GaAs FET |
| MGF0918A_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF0919A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:L & S BAND GaAs FET [ SMD non - matched ] |
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