型號: | MG300Q2YS50 |
廠商: | Toshiba Corporation |
英文描述: | Silicon N channel IGBT(N溝道絕緣柵雙極型晶體管) |
中文描述: | 硅N通道IGBT的(不適用溝道絕緣柵雙極型晶體管) |
文件頁數(shù): | 7/7頁 |
文件大?。?/td> | 349K |
代理商: | MG300Q2YS50 |
相關PDF資料 |
PDF描述 |
---|---|
MG300Q2YS61 | High Power Switching Applications Motor Control Applications |
MG30J6ES50 | Silicon N channel IGBT(N溝道絕緣柵雙極型晶體管) |
MG360V1US41 | Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:50mA; Current, It av:12A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes |
MG400J2YS60A | Network Cable Assembly; Connector Type A:T568A/B Modular Plug; Connector Type B:T568A/B Modular Plug; Cable Length:15ft; Approval Categories:Augmented Category 6 standards; cord color per TIA/EIA-606 standard RoHS Compliant: Yes |
MG400Q1US41 | Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:25mA; Current, It av:12A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes |
相關代理商/技術參數(shù) |
參數(shù)描述 |
---|---|
MG300Q2YS60A | 功能描述:IGBT MOD CMPCT DUAL 1200V 300A RoHS:是 類別:半導體模塊 >> IGBT 系列:IGBTMOD™ 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時的最大Vce(開):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應商設備封裝:SOT-227B |
MG300Q2YS61 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High Power Switching Applications Motor Control Applications |
MG300Q2YS65H | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA IGBT Module Silicon N Channel IGBT |
MG-3020DD | 制造商:EPSONTOYOCOM 制造商全稱:Epson ToYoCom 功能描述:Crystal oscillator |
MG30G2CL3 | 制造商:n/a 功能描述:_ 制造商:Toshiba America Electronic Components 功能描述: |