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參數(shù)資料
| 型號(hào)： | MG1200FXF1US51 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA GTR Module Silicon N-Channel IGBT |
| 中文描述： | 東芝滋養(yǎng)模塊硅N溝道IGBT的 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 94K |
| 代理商： | MG1200FXF1US51 |
MG1200FXF1US51
2001-09-05
1
TOSHIBA GTR Module Silicon N-Channel IGBT
MG1200FXF1US51
High Power Switching Applications
Motor Control Applications
High input impedance
Enhancement mode
Electrodes are isolated from case.
Equivalent Circuit
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
V
CES
3300
V
Gate-emitter voltage
V
GES
20
V
DC
I
C
1200
A
Collector current
1 ms
I
CP
2400
A
Peak 1 cycle surge current
10 ms (half sine)
I
FSM
10
kA
Operating junction temperature
T
j
40~125
°C
Storage temperature range
T
stg
40~125
°C
Isolation voltage
V
Isol
6000 (AC 1 min)
V
Terminal: M4/M8
2/7
Screw torque
Mounting
4
Nm
Caution: MG1200FXF1US51 has no short-circuit capability.
Preliminary
C
G
C
C
C
E
E
E
E
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