參數(shù)資料
型號(hào): MCM72FB8ML8R
廠商: MOTOROLA INC
元件分類: SRAM
英文描述: 256K x 72 Bit Burst RAM Multichip Module
中文描述: 256K X 72 CACHE SRAM MODULE, 8 ns, PBGA209
封裝: PLASTIC, BGA-209
文件頁(yè)數(shù): 8/20頁(yè)
文件大小: 252K
代理商: MCM72FB8ML8R
MCM72FB8ML MCM72PB8ML
8
MOTOROLA FAST SRAM
DC CHARACTERISTICS AND SUPPLY CURRENTS
Parameter
Symbol
Min
Typ
Max
Unit
Notes
Input Leakage Current (0 V
Vin
VDD)
Output Leakage Current (0 V
Vin
VDDQ)
AC Supply Current (Device Selected,
All Outputs Open, Freq = Max, VDD = Max, VDDQ = Max)
Includes Supply Current from Both VDD and VDDQ
Ilkg(I)
Ilkg(O)
IDDA
±
1
μ
A
±
1
μ
A
1700
mA
1, 2, 3
CMOS Standby Supply Current (Device Deselected, Freq = 0,
VDD = Max, VDDQ = Max, All Inputs Static at CMOS Levels)
ISB2
TBD
mA
4. 5
TTL Standby Supply Current (Device Deselected, Freq = 0,
VDD = Max, VDDQ = Max, All Inputs Static at TTL Levels)
ISB3
TBD
mA
4, 6
Clock Running (Device Deselected, Freq = Max,
VDD = Max, VDDQ = Max, All Inputs Toggling at
CMOS Levels)
ISB4
TBD
mA
4. 5
Static Clock Running (Device Deselected, Freq = Max,
VDD = Max, VDDQ = Max, All Inputs Static at TTL Levels)
ISB5
TBD
mA
4, 6
Output Low Voltage (IOL = 2 mA) VDDQ = 2.5 V
Output High Voltage (IOH = – 2 mA) VDDQ = 2.5 V
Output Low Voltage (IOL = 8 mA) VDDQ = 3.3 V
Output High Voltage (IOH = – 4 mA) VDDQ = 3.3 V
NOTES:
1. Reference AC Operating Conditions and Characteristics for input and timing.
2. All addresses transition simultaneously low (LSB) then high (MSB).
3. Data states are all zero.
4. Device is deselected as defined by the Truth Table.
5. CMOS levels for I/O’s are VIT
VSS + 0.2 V or
VDDQ – 0.2 V. CMOS levels for other inputs are Vin
VSS + 0.2 V or
VDD – 0.2 V.
6. TTL levels for I/O’s are VIT
VIL or
VIH2. TTL levels for other inputs are Vin
VIL or
VIH.
VOL1
VOH1
VOL2
VOH2
0.7
V
1.7
V
0.4
V
2.4
V
CAPACITANCE
(f = 1.0 MHz, dV = 3.0 V, TA = 0 to 70
°
C
, Periodically Sampled Rather Than 100% Tested)
Parameter
Symbol
Min
Typ
Max
Unit
Input Capacitance
Cin
CI/O
16
pF
Input/Output Capacitance
5
pF
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