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參數(shù)資料
| 型號(hào)： | 933179600116 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, SPT, SC-43, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 47K |
| 代理商： | 933179600116 |
1999 Apr 15
3
Philips Semiconductors
Product specication
NPN general purpose transistor
BC337
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Note
1. VBE decreases by about 2 mV/K with increasing temperature.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
0.2
K/mW
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =20V
100
nA
IE = 0; VCB = 20 V; Tj = 150 °C
5
A
IEBO
emitter cut-off current
IC = 0; VEB =5V
100
nA
hFE
DC current gain
IC = 100 mA; VCE =1V;
see Figs 2, 3 and 4
BC337
100
600
BC337-16
100
250
BC337-25
160
400
BC337-40
250
600
DC current gain
IC = 500 mA; VCE =1V;
see Figs 2, 3 and 4
40
VCEsat
collector-emitter saturation
voltage
IC = 500 mA; IB =50mA
700
mV
VBE
base-emitter voltage
IC = 500 mA; VCE = 1 V; note 1
1.2
V
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
5
pF
fT
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz
100
MHz
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