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參數(shù)資料
| 型號(hào)： | 933982040115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 0.6 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, SC-73, 4 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 46K |
| 代理商： | 933982040115 |
1999 Apr 14
3
Philips Semiconductors
Product specication
PNP switching transistor
PZT2907A
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
106
K/W
Rth j-s
thermal resistance from junction to soldering point
25
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 50 V
10
nA
IE = 0; VCB = 50 V; Tamb = 150 °C
10
A
IEBO
emitter cut-off current
IC = 0; VEB = 5V
50
nA
hFE
DC current gain
IC = 0.1 mA; VCE = 10 V
75
IC = 1 mA; VCE = 10 V
100
IC = 10 mA; VCE = 10 V
100
IC = 150 mA; VCE = 10 V; note 1
100
300
IC = 500 mA; VCE = 10 V; note 1
50
VCEsat
collector-emitter saturation voltage
IC = 150 mA; IB = 15 mA; note 1
400
mV
IC = 500 mA; IB = 50 mA; note 1
1.6
V
VBEsat
base-emitter saturation voltage
IC = 150 mA; IB = 15 mA; note 1
1.3
V
IC = 500 mA; IB = 50 mA; note 1
2.6
V
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
8pF
Ce
emitter capacitance
IC =ic = 0; VEB = 2 V; f = 1 MHz
30
pF
fT
transition frequency
IC = 50 mA; VCE = 20 V;
f = 100 MHz; note 1
200
MHz
Switching times (between 10% and 90% levels); (see Fig.2)
ton
turn-on time
ICon = 150 mA; IBon = 15 mA;
IBoff =15mA
40
ns
td
delay time
12
ns
tr
rise time
30
ns
toff
turn-off time
365
ns
ts
storage time
300
ns
tf
fall time
65
ns
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