參數(shù)資料
型號: MBRS320
元件分類: 參考電壓二極管
英文描述: 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AB
封裝: SMC, SIMILAR TO DO-214AB, 2 PIN
文件頁數(shù): 2/6頁
文件大?。?/td> 44K
代理商: MBRS320
MBRS320
Bulletin PD-20645 rev. D 03/03
2
www.irf.com
Part number
MBRS320
VR
Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
Voltage Ratings
20
V
FM
Max. Forward Voltage Drop
(1)
0.41
0.45
V
@ 3A
0.45
0.53
V
@ 6A
0.29
0.36
V
@ 3A
0.35
0.46
V
@ 6A
I
RM
Max. Reverse Leakage Current (1)
0.04
0.5
mA
T
J
= 25 °C
8.0
20
mA
T
J
= 100 °C
V
R
= rated V
R
23
35
mA
T
J
= 125 °C
CT
Typical Junction Capacitance
360
-
pF
VR = 5VDC (test signal range 100kHz to
1Mhz), @ 25°C
L
S
Typical Series Inductance
3.0
-
nH
Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change
-
10000
V/ s (Rated VR)
T
J
= 25 °C
T
J
= 125 °C
Electrical Specifications
Parameters
Typ.
Max.
Units
Conditions
(1) Pulse Width < 300s, Duty Cycle < 2%
T
J
Max. Junction Temperature Range (*)
- 65 to 150
°C
T
stg
Max. Storage Temperature Range
- 65 to 150
°C
R
thJL
Max. Thermal Resistance Junction
12
°C/W
DC operation
to Lead
(**)
R
thJA
Max. Thermal Resistance Junction
46
°C/W
to Ambient
Wt
Approximate Weight
0.24(0.008) gr (oz)
Case Style
SMC
Similar DO-214AB
Device Marking
IR32
Parameters
Value
Units
Conditions
<
thermal runaway condition for a diode on its own heatsink
(**) Mounted 1 inch square PCB
Thermal-Mechanical Specifications
(*) dPtot
1
dTj
Rth( j-a)
I
F(AV)
Max. Average Forward Current
3.0
A
50% duty cycle @ T
L
= 136°C, rectangular wave form
I
FSM
Max. Peak One Cycle Non-Repetitive
820
5s Sine or 3s Rect. pulse
Surge Current
80
10ms Sine or 6ms Rect. pulse
E
AS
Non Repetitive Avalanche Energy
4
mJ
T
J
= 25 °C, I
AS
= 1.0A, L = 8mH
I
AR
Repetitive Avalanche Current
1.0
A
Current decaying linearly to zero in 1 sec
Frequency limited by T
J max. Va = 1.5 x Vr typical
Parameters
Value
Units Conditions
Absolute Maximum Ratings
Following any rated
load condition and
with rated VRRM applied
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